Menu
CorsaCorsa
Rfqs / ordine
0Rfqs / ordine

Diodi - Raddrizzatori - Matrici

MBRD660CTG
ON Semiconductor

MBRD660CTG

partiture parte: 81424

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 3A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 3A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
NRVHP820MFDT3G
ON Semiconductor

NRVHP820MFDT3G

partiture parte: 69

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 4A, Tensione - Avanti (Vf) (Max) @ Se: 1.05V @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBRT300200R
GeneSiC Semiconductor

MBRT300200R

partiture parte: 1564

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 150A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 150A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR400150CTR
GeneSiC Semiconductor

MBR400150CTR

partiture parte: 1548

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 200A, Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 200A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBRT300150R
GeneSiC Semiconductor

MBRT300150R

partiture parte: 1563

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 150A, Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 150A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR200100CTR
GeneSiC Semiconductor

MBR200100CTR

partiture parte: 1533

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 200A (DC), Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR40080CTR
GeneSiC Semiconductor

MBR40080CTR

partiture parte: 1212

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 400A (DC), Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 200A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR20060CTR
GeneSiC Semiconductor

MBR20060CTR

partiture parte: 1519

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 200A (DC), Tensione - Avanti (Vf) (Max) @ Se: 750mV @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR2X050A045
GeneSiC Semiconductor

MBR2X050A045

partiture parte: 3870

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 50A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 50A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBRT40045R
GeneSiC Semiconductor

MBRT40045R

partiture parte: 1156

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 400A (DC), Tensione - Avanti (Vf) (Max) @ Se: 750mV @ 200A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR2X100A200
GeneSiC Semiconductor

MBR2X100A200

partiture parte: 3030

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 100A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR200150CT
GeneSiC Semiconductor

MBR200150CT

partiture parte: 1552

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 100A, Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MURT20020
GeneSiC Semiconductor

MURT20020

partiture parte: 1213

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 200A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.3V @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR600100CT
GeneSiC Semiconductor

MBR600100CT

partiture parte: 972

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 300A, Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 300A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MSRT200140(A)D
GeneSiC Semiconductor

MSRT200140(A)D

partiture parte: 1324

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 1400V, Current - Mediu Rettificatu (Io) (per Diode): 200A, Tensione - Avanti (Vf) (Max) @ Se: 1.1V @ 200A, Velocità: Standard Recovery >500ns, > 200mA (Io),

To wishlist
MBR500100CTR
GeneSiC Semiconductor

MBR500100CTR

partiture parte: 1192

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Schottky, Reverse Polarity, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 500A (DC), Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 250A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR2X100A120
GeneSiC Semiconductor

MBR2X100A120

partiture parte: 3096

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 120V, Current - Mediu Rettificatu (Io) (per Diode): 100A, Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBRT12035
GeneSiC Semiconductor

MBRT12035

partiture parte: 1844

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 120A (DC), Tensione - Avanti (Vf) (Max) @ Se: 750mV @ 60A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MUR30060CT
GeneSiC Semiconductor

MUR30060CT

partiture parte: 1342

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 300A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR12030CT
GeneSiC Semiconductor

MBR12030CT

partiture parte: 1491

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 120A (DC), Tensione - Avanti (Vf) (Max) @ Se: 650mV @ 60A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
FST160150
GeneSiC Semiconductor

FST160150

partiture parte: 1636

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 80A, Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 80A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
V30DM120CHM3/I
Vishay Semiconductor Diodes Division

V30DM120CHM3/I

partiture parte: 100592

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 120V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 970mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
VT2060C-M3/4W
Vishay Semiconductor Diodes Division

VT2060C-M3/4W

partiture parte: 109388

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 650mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
VT3060G-E3/4W
Vishay Semiconductor Diodes Division

VT3060G-E3/4W

partiture parte: 128134

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 730mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
VFT2045CBP-M3/4W
Vishay Semiconductor Diodes Division

VFT2045CBP-M3/4W

partiture parte: 102836

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 580mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
VIT4060C-M3/4W
Vishay Semiconductor Diodes Division

VIT4060C-M3/4W

partiture parte: 67167

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 620mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
V40PW60C-M3/I
Vishay Semiconductor Diodes Division

V40PW60C-M3/I

partiture parte: 116952

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 680mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
VFT3060G-M3/4W
Vishay Semiconductor Diodes Division

VFT3060G-M3/4W

partiture parte: 121490

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 730mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
VIT6045C-M3/4W
Vishay Semiconductor Diodes Division

VIT6045C-M3/4W

partiture parte: 47709

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 640mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
V20M120M-E3/4W
Vishay Semiconductor Diodes Division

V20M120M-E3/4W

partiture parte: 159782

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 120V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.01V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
V40120C-M3/4W
Vishay Semiconductor Diodes Division

V40120C-M3/4W

partiture parte: 58911

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 120V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
V20202G-M3/4W
Vishay Semiconductor Diodes Division

V20202G-M3/4W

partiture parte: 40301

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR1090CT-E3/4W
Vishay Semiconductor Diodes Division

MBR1090CT-E3/4W

partiture parte: 120106

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 5A, Tensione - Avanti (Vf) (Max) @ Se: 850mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
UGF2006GHC0G
Taiwan Semiconductor Corporation

UGF2006GHC0G

partiture parte: 157

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR20200CTHC0G
Taiwan Semiconductor Corporation

MBR20200CTHC0G

partiture parte: 152

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1.23V @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
GHXS010A060S-D3
Global Power Technologies Group

GHXS010A060S-D3

partiture parte: 3747

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist