Transistori - FET, MOSFET - Matrici

FDMC9430L-F085

partiture parte: 211

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12A, Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C466NLT1G

partiture parte: 9983

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 14A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

FDS8958A

partiture parte: 10836

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A, 5A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDD8424H

partiture parte: 181368

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A, 6.5A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

EFC4630R-TR

partiture parte: 3001

Tipu FET: 2 N-Channel (Dual) Common Drain, Funzione FET: Logic Level Gate, 2.5V Drive, Scaricamentu à a Tensione di Sorgente (Vdss): 24V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Ta), Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

FDMS3606AS

partiture parte: 63299

Tipu FET: 2 N-Channel (Dual) Asymmetrical, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 13A, 27A, Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

FDS6982AS_G

partiture parte: 2936

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.3A, 8.6A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, 13.5 mOhm @ 8.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA,

ECH8651R-R-TL-HX

partiture parte: 2970

FDZ1416NZ

partiture parte: 131465

Tipu FET: 2 N-Channel (Dual) Common Drain, Funzione FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

NVMFD5875NLWFT1G

partiture parte: 147994

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SSM6L13TU(T5L,F,T)

partiture parte: 2912

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, 1.8V Drive, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

SSM6N48FU,RF(D

partiture parte: 2967

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, 2.5V Drive, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

IRF7380QTRPBF

partiture parte: 2971

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 80V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

IRF7341QTRPBF

partiture parte: 2975

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.1A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IRF5810TRPBF

partiture parte: 3074

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.9A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

IRF7904PBF

partiture parte: 75561

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.6A, 11A, Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 2.25V @ 25µA,

IRF7343TRPBF

partiture parte: 191306

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.7A, 3.4A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN1003UCA6-7

partiture parte: 9998

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

DMN63D1LDW-13

partiture parte: 120600

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

DMT3020LFDB-7

partiture parte: 173648

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.7A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ZXMC4559DN8TC

partiture parte: 98680

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.6A, 2.6A, Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMN2028UFU-13

partiture parte: 184757

Tipu FET: 2 N-Channel (Dual) Common Drain, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.5A, Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMG8601UFG-7

partiture parte: 139933

Tipu FET: 2 N-Channel (Dual) Common Drain, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.1A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.05V @ 250µA,

DMC1030UFDBQ-7

partiture parte: 120462

Tipu FET: N and P-Channel Complementary, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.1A, Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMP2200UDW-13

partiture parte: 108457

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 900mA, Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

DMN63D1LDW-7

partiture parte: 176531

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

CSD83325L

partiture parte: 156131

Tipu FET: 2 N-Channel (Dual) Common Drain, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

VMM300-03F

partiture parte: 404

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 300V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 290A, Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 145A, 10V, Vgs (th) (Max) @ Id: 4V @ 30mA,

VMM650-01F

partiture parte: 405

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 680A, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 500A, 10V, Vgs (th) (Max) @ Id: 4V @ 30mA,

UPA1764G-E1-A

partiture parte: 2982

SI1905BDH-T1-E3

partiture parte: 3022

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 8V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 630mA, Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI4904DY-T1-GE3

partiture parte: 68499

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

SI4900DY-T1-GE3

partiture parte: 132105

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SIA907EDJT-T1-GE3

partiture parte: 150001

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

TC6215TG-G

partiture parte: 66450

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

PHN210,118

partiture parte: 3099

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 1mA,