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Transistori - FET, MOSFET - Matrici

FDG6301N
ON Semiconductor

FDG6301N

partiture parte: 168456

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 220mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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FDC6561AN
ON Semiconductor

FDC6561AN

partiture parte: 139456

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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NVMFD5C680NLT1G
ON Semiconductor

NVMFD5C680NLT1G

partiture parte: 9923

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.5A (Ta), 26A (Tc), Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 13µA,

To wishlist
FDS8947A
ON Semiconductor

FDS8947A

partiture parte: 2987

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 52 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

To wishlist
FDML7610S
ON Semiconductor

FDML7610S

partiture parte: 100177

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12A, 17A, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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NTJD4152PT2G
ON Semiconductor

NTJD4152PT2G

partiture parte: 174011

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 880mA, Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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NTMD6N02R2G
ON Semiconductor

NTMD6N02R2G

partiture parte: 152790

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.92A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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NVMD6N04R2G
ON Semiconductor

NVMD6N04R2G

partiture parte: 160815

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.6A, Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

To wishlist
NVMFD5C672NLT1G
ON Semiconductor

NVMFD5C672NLT1G

partiture parte: 262

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

To wishlist
FDMD8260LET60
ON Semiconductor

FDMD8260LET60

partiture parte: 41547

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

To wishlist
NDS9952A
ON Semiconductor

NDS9952A

partiture parte: 160596

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.7A, 2.9A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

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FDMS3622S
ON Semiconductor

FDMS3622S

partiture parte: 105683

Tipu FET: 2 N-Channel (Dual) Asymmetrical, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 17.5A, 34A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

To wishlist
FDMS3610S
ON Semiconductor

FDMS3610S

partiture parte: 116056

Tipu FET: 2 N-Channel (Dual) Asymmetrical, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 17.5A, 30A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

To wishlist
FDC6302P
ON Semiconductor

FDC6302P

partiture parte: 184685

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 120mA, Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

To wishlist
ECH8649-TL-H
ON Semiconductor

ECH8649-TL-H

partiture parte: 2942

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.5A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V,

To wishlist
ECH8601M-TL-H-P
ON Semiconductor

ECH8601M-TL-H-P

partiture parte: 2925

Tipu FET: 2 N-Channel (Dual) Common Drain, Funzione FET: Logic Level Gate, 2.5V Drive, Scaricamentu à a Tensione di Sorgente (Vdss): 24V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A (Ta), Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

To wishlist
FDS9945
ON Semiconductor

FDS9945

partiture parte: 120654

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

To wishlist
NTMFD4901NFT1G
ON Semiconductor

NTMFD4901NFT1G

partiture parte: 126984

Tipu FET: 2 N-Channel (Dual), Schottky, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10.3A, 17.9A, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

To wishlist
GWM100-01X1-SLSAM
IXYS

GWM100-01X1-SLSAM

partiture parte: 2795

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 90A, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

To wishlist
CTLDM7120-M832DS TR
Central Semiconductor Corp

CTLDM7120-M832DS TR

partiture parte: 136453

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1A (Ta), Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

To wishlist
DMC3016LDV-7
Diodes Incorporated

DMC3016LDV-7

partiture parte: 175686

Tipu FET: N and P-Channel Complementary, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 21A (Tc), 15A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

To wishlist
DMN3016LDV-7
Diodes Incorporated

DMN3016LDV-7

partiture parte: 157491

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Current - Scaricamentu Continuu (Id) @ 25 ° C: 21A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

To wishlist
DMN63D8LDWQ-7
Diodes Incorporated

DMN63D8LDWQ-7

partiture parte: 161902

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 220mA, Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

To wishlist
DMN2004DWK-7
Diodes Incorporated

DMN2004DWK-7

partiture parte: 161664

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 540mA, Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist
PMDPB56XNEAX
Nexperia USA Inc.

PMDPB56XNEAX

partiture parte: 198127

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

To wishlist
STS5DPF20L
STMicroelectronics

STS5DPF20L

partiture parte: 89710

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

To wishlist
STL20DNF06LAG
STMicroelectronics

STL20DNF06LAG

partiture parte: 155965

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

To wishlist
STL66DN3LLH5
STMicroelectronics

STL66DN3LLH5

partiture parte: 78965

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 78.5A, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

To wishlist
SH8K3TB1
Rohm Semiconductor

SH8K3TB1

partiture parte: 55153

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

To wishlist
IRFH4253DTRPBF
Infineon Technologies

IRFH4253DTRPBF

partiture parte: 74468

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 64A, 145A, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

To wishlist
SIZ350DT-T1-GE3
Vishay Siliconix

SIZ350DT-T1-GE3

partiture parte: 220

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 18.5A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 6.75 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

To wishlist
SI4590DY-T1-GE3
Vishay Siliconix

SI4590DY-T1-GE3

partiture parte: 189788

Tipu FET: N and P-Channel, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A, 2.8A, Rds On (Max) @ Id, Vgs: 57 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

To wishlist
SI3900DV-T1-GE3
Vishay Siliconix

SI3900DV-T1-GE3

partiture parte: 169893

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

To wishlist
SI1023X-T1-GE3
Vishay Siliconix

SI1023X-T1-GE3

partiture parte: 119178

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 370mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

To wishlist
CSD87335Q3D
Texas Instruments

CSD87335Q3D

partiture parte: 96785

Tipu FET: 2 N-Channel (Dual) Asymmetrical, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Vgs (th) (Max) @ Id: 1.9V @ 250µA,

To wishlist
HCT802
TT Electronics/Optek Technology

HCT802

partiture parte: 2104

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 90V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A, 1.1A, Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

To wishlist