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Transistori - FET, MOSFET - Matrici

SI3981DV-T1-GE3
Vishay Siliconix

SI3981DV-T1-GE3

partiture parte: 2791

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.6A, Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

To wishlist
SI5920DC-T1-E3
Vishay Siliconix

SI5920DC-T1-E3

partiture parte: 2798

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 8V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist
SI1913EDH-T1-E3
Vishay Siliconix

SI1913EDH-T1-E3

partiture parte: 2794

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 880mA, Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 100µA,

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SI7214DN-T1-GE3
Vishay Siliconix

SI7214DN-T1-GE3

partiture parte: 99144

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.6A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI6981DQ-T1-GE3
Vishay Siliconix

SI6981DQ-T1-GE3

partiture parte: 2836

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.1A, Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 300µA,

To wishlist
SI6562DQ-T1-E3
Vishay Siliconix

SI6562DQ-T1-E3

partiture parte: 3304

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

To wishlist
SIZ342DT-T1-GE3
Vishay Siliconix

SIZ342DT-T1-GE3

partiture parte: 178805

Tipu FET: 2 N-Channel (Dual), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15.7A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

To wishlist
SI4330DY-T1-E3
Vishay Siliconix

SI4330DY-T1-E3

partiture parte: 2782

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.6A, Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

To wishlist
SI4953ADY-T1-GE3
Vishay Siliconix

SI4953ADY-T1-GE3

partiture parte: 2804

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.7A, Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

To wishlist
SI4622DY-T1-GE3
Vishay Siliconix

SI4622DY-T1-GE3

partiture parte: 2878

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

To wishlist
SI9934BDY-T1-E3
Vishay Siliconix

SI9934BDY-T1-E3

partiture parte: 3305

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.8A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

To wishlist
SI3948DV-T1-E3
Vishay Siliconix

SI3948DV-T1-E3

partiture parte: 2733

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

To wishlist
SI4914BDY-T1-E3
Vishay Siliconix

SI4914BDY-T1-E3

partiture parte: 118968

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.4A, 8A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

To wishlist
SI4618DY-T1-GE3
Vishay Siliconix

SI4618DY-T1-GE3

partiture parte: 64981

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, 15.2A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

To wishlist
EMH2408-TL-H
ON Semiconductor

EMH2408-TL-H

partiture parte: 2843

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V,

To wishlist
FDS8934A
ON Semiconductor

FDS8934A

partiture parte: 2753

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist
MMDF2N02ER2G
ON Semiconductor

MMDF2N02ER2G

partiture parte: 2690

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

To wishlist
NTHD2102PT1G
ON Semiconductor

NTHD2102PT1G

partiture parte: 3360

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 8V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

To wishlist
FW276-TL-2H
ON Semiconductor

FW276-TL-2H

partiture parte: 3348

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 450V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 700mA, Rds On (Max) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

To wishlist
NVMD6N03R2G
ON Semiconductor

NVMD6N03R2G

partiture parte: 2901

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

To wishlist
MCH6601-TL-E
ON Semiconductor

MCH6601-TL-E

partiture parte: 168759

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

To wishlist
NTQD6866R2G
ON Semiconductor

NTQD6866R2G

partiture parte: 2711

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.7A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

To wishlist
NTUD3128NT5G
ON Semiconductor

NTUD3128NT5G

partiture parte: 2747

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist
IRF5852
Infineon Technologies

IRF5852

partiture parte: 2710

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.7A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

To wishlist
IRF7751TRPBF
Infineon Technologies

IRF7751TRPBF

partiture parte: 2786

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

To wishlist
IRF7504TR
Infineon Technologies

IRF7504TR

partiture parte: 2662

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.7A, Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

To wishlist
IRF7319PBF
Infineon Technologies

IRF7319PBF

partiture parte: 85832

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist
IRF7509TR
Infineon Technologies

IRF7509TR

partiture parte: 2686

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.7A, 2A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist
IRF7303QTRPBF
Infineon Technologies

IRF7303QTRPBF

partiture parte: 2779

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.9A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist
IRF6723M2DTRPBF
Infineon Technologies

IRF6723M2DTRPBF

partiture parte: 2819

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A, Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

To wishlist
IRFH4255DTRPBF
Infineon Technologies

IRFH4255DTRPBF

partiture parte: 2936

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 64A, 105A, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

To wishlist
ZXMP3F37DN8TA
Diodes Incorporated

ZXMP3F37DN8TA

partiture parte: 2938

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.7A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

To wishlist
TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

partiture parte: 2781

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

To wishlist
IXTL2X220N075T
IXYS

IXTL2X220N075T

partiture parte: 2763

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 75V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 120A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

To wishlist
SP8K1TB
Rohm Semiconductor

SP8K1TB

partiture parte: 2651

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

To wishlist
UP04878G0L
Panasonic Electronic Components

UP04878G0L

partiture parte: 2789

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 50V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,

To wishlist