Transistori - FET, MOSFET - Matrici

Microsemi Corporation

APTM10AM02FG

partiture parte: 400

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 495A, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

To wishlist

APTM10DSKM09T3G

Microsemi Corporation

APTM10DSKM09T3G

partiture parte: 1457

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

To wishlist

Microsemi Corporation

APTC60BBM24T3G

partiture parte: 1133

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

To wishlist

APTML602U12R020T3AG

Microsemi Corporation

APTML602U12R020T3AG

partiture parte: 485

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 45A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

To wishlist

Microsemi Corporation

APTC60HM70BT3G

partiture parte: 1289

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

To wishlist

Microsemi Corporation

APTM20HM16FTG

partiture parte: 748

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 104A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

To wishlist

Microsemi Corporation

APTM20AM10FTG

partiture parte: 856

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 175A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

To wishlist

APTMC120AM09CT3AG

Microsemi Corporation

APTMC120AM09CT3AG

partiture parte: 162

Tipu FET: 2 N Channel (Phase Leg), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 295A (Tc), Rds On (Max) @ Id, Vgs: 9 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 40mA (Typ),

To wishlist

APTC60DDAM70T1G

Microsemi Corporation

APTC60DDAM70T1G

partiture parte: 2258

Tipu FET: 2 N Channel (Dual Buck Chopper), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

To wishlist

Microsemi Corporation

APTC60AM45BC1G

partiture parte: 1478

Tipu FET: 3 N Channel (Phase Leg + Boost Chopper), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

To wishlist

Microsemi Corporation

APTM10TAM09FPG

partiture parte: 558

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

To wishlist

APTM100DSK35T3G

Microsemi Corporation

APTM100DSK35T3G

partiture parte: 1267

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

To wishlist

Microsemi Corporation

APTC60AM45B1G

partiture parte: 1093

Tipu FET: 3 N Channel (Phase Leg + Boost Chopper), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

To wishlist

Microsemi Corporation

APTM100H46FT3G

partiture parte: 1492

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 19A, Rds On (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

To wishlist

Microsemi Corporation

APTM50HM75FTG

partiture parte: 809

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 46A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

To wishlist

Microsemi Corporation

APTC60HM24T3G

partiture parte: 757

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

To wishlist

Microsemi Corporation

APTM100AM90FG

partiture parte: 379

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 78A, Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

To wishlist

Microsemi Corporation

APTM20DUM05G

partiture parte: 536

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 317A, Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

To wishlist

Microsemi Corporation

APTM100H35FTG

partiture parte: 731

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

To wishlist

Microsemi Corporation

APTM50AM35FTG

partiture parte: 766

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

To wishlist

Microsemi Corporation

APTM50HM65FTG

partiture parte: 767

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

To wishlist

Microsemi Corporation

APTM100TA35FPG

partiture parte: 533

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

To wishlist

Microsemi Corporation

APTC60HM70T1G

partiture parte: 1743

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

To wishlist

Microsemi Corporation

APTM50HM35FG

partiture parte: 448

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

To wishlist

Microsemi Corporation

APTM60A11FT1G

partiture parte: 2026

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A, Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

To wishlist

Microsemi Corporation

APTC60DHM24T3G

partiture parte: 1204

Tipu FET: 2 N-Channel (Dual) Asymmetrical, Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

To wishlist

Microsemi Corporation

APTC60AM24SCTG

partiture parte: 712

Tipu FET: 2 N Channel (Phase Leg), Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

To wishlist

APTMC120HM17CT3AG

Microsemi Corporation

APTMC120HM17CT3AG

partiture parte: 306

Tipu FET: 4 N-Channel, Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 147A (Tc), Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 4V @ 30mA,

To wishlist

Microsemi Corporation

APTM50DDA10T3G

partiture parte: 1671

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 37A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

To wishlist

Microsemi Corporation

APTM50HM38FG

partiture parte: 461

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

To wishlist

Microsemi Corporation

APTM120A15FG

partiture parte: 396

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A, Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

To wishlist

Microsemi Corporation

APTC80TDU15PG

partiture parte: 936

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

To wishlist

Microsemi Corporation

APTM50AM17FG

partiture parte: 423

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 180A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

To wishlist

Microsemi Corporation

APTM10DUM02G

partiture parte: 488

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 495A, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

To wishlist

APTMC170AM60CT1AG

Microsemi Corporation

APTMC170AM60CT1AG

partiture parte: 196

Tipu FET: 2 N Channel (Phase Leg), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1700V (1.7kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 50A (Tc), Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2.5mA (Typ),

To wishlist

APTC60VDAM45T1G

Microsemi Corporation

APTC60VDAM45T1G

partiture parte: 1797

Tipu FET: 2 N-Channel (Dual), Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

To wishlist

3600

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