Transistori - FET, MOSFET - Matrici

SP8M70TB1

partiture parte: 89658

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 250V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A, 2.5A, Rds On (Max) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

SI1967DH-T1-E3

partiture parte: 177519

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI7218DN-T1-E3

partiture parte: 159065

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 24A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SQJ914EP-T1_GE3

partiture parte: 2508

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI5948DU-T1-GE3

partiture parte: 153924

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Tc), Rds On (Max) @ Id, Vgs: 82 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SIS990DN-T1-GE3

partiture parte: 178823

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12.1A, Rds On (Max) @ Id, Vgs: 85 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

SI7220DN-T1-E3

partiture parte: 82356

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SQJ946EP-T1_GE3

partiture parte: 173017

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Tc), Rds On (Max) @ Id, Vgs: 33 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SIS903DN-T1-GE3

partiture parte: 2575

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Tc), Rds On (Max) @ Id, Vgs: 20.1 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SIA921EDJ-T4-GE3

partiture parte: 178268

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

NX3008PBKS,115

partiture parte: 177372

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

NX3008CBKS,115

partiture parte: 146141

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 350mA, 200mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

IPG20N06S4L26AATMA1

partiture parte: 186995

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 26 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 10µA,

IPG20N10S4L35ATMA1

partiture parte: 169062

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 16µA,

IPG16N10S461AATMA1

partiture parte: 195163

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 16A, Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 9µA,

IPG20N04S4L08ATMA1

partiture parte: 128418

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 22µA,

IRF7351TRPBF

partiture parte: 111531

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 4V @ 50µA,

IPG20N06S2L35AATMA1

partiture parte: 128569

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A (Tc), Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2V @ 27µA,

IRF9953TRPBF

partiture parte: 182561

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IPG20N04S412AATMA1

partiture parte: 165975

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 15µA,

EPC2107ENGRT

partiture parte: 82626

Tipu FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Funzione FET: GaNFET (Gallium Nitride), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.7A, 500mA, Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

FDS4935A

partiture parte: 147695

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTMFD4C87NT3G

partiture parte: 32594

Tipu FET: 2 N-Channel (Dual) Asymmetrical, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11.7A, 14.9A, Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

FDS9926A

partiture parte: 151006

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.5A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS9934C

partiture parte: 179792

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.5A, 5A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

ECH8655R-R-TL-H

partiture parte: 144107

NTJD4001NT1G

partiture parte: 105829

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

NTJD4152PT1G

partiture parte: 195187

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 880mA, Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

NDS9945

partiture parte: 124416

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5853NLT1G

partiture parte: 113880

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

FW4604-TL-2W

partiture parte: 128054

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, 4.5V Drive, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, 4.5A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V,

DMP58D0SV-7

partiture parte: 194639

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 50V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 100mA, 5V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

DMN26D0UDJ-7

partiture parte: 112847

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 240mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1.05V @ 250µA,

DMG6602SVTQ-7

partiture parte: 143884

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A, 2.8A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

SSM6P36FE,LM

partiture parte: 140070

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 330mA, Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

SSM6N48FU,LF

partiture parte: 3270

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,