Transistori - FET, MOSFET - Matrici | Prudutti Discreti à Semiconduttore | 100

SI4931DY-T1-GE3

partiture parte: 180864

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.7A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 350µA,

To wishlist

Vishay Siliconix

SI4228DY-T1-GE3

partiture parte: 190253

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

To wishlist

Vishay Siliconix

SI8902AEDB-T2-E1

partiture parte: 3310

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 24V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

To wishlist

Vishay Siliconix

SQJ960EP-T1_GE3

partiture parte: 77437

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

To wishlist

Vishay Siliconix

SIA527DJ-T1-GE3

partiture parte: 180836

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist

Vishay Siliconix

SIB912DK-T1-GE3

partiture parte: 125137

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist

Vishay Siliconix

SI9933CDY-T1-GE3

partiture parte: 185277

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

To wishlist

Vishay Siliconix

SI7942DP-T1-E3

partiture parte: 63525

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.8A, Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

To wishlist

Vishay Siliconix

SI7922DN-T1-GE3

partiture parte: 86516

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.8A, Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

To wishlist

Vishay Siliconix

SI1036X-T1-GE3

partiture parte: 2514

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 610mA (Ta), Rds On (Max) @ Id, Vgs: 540 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist

Vishay Siliconix

SI7956DP-T1-GE3

partiture parte: 44000

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.6A, Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

To wishlist

Nexperia USA Inc.

NX1029X,115

partiture parte: 166606

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, 50V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 330mA, 170mA, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

To wishlist

Nexperia USA Inc.

PMGD780SN,115

partiture parte: 171536

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 490mA, Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

To wishlist

Rohm Semiconductor

EM6K1T2R

partiture parte: 188653

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

To wishlist

Rohm Semiconductor

QS5K2TR

partiture parte: 110824

Tipu FET: 2 N-Channel (Dual) Common Source, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

To wishlist

Rohm Semiconductor

QH8JA1TCR

partiture parte: 135582

Tipu FET: 2 P-Channel (Dual), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

To wishlist

Rohm Semiconductor

UM6K1NTN

partiture parte: 176441

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

To wishlist

Toshiba Semiconductor and Storage

SSM6N56FE,LM

partiture parte: 179879

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, 1.5V Drive, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 800mA, Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

To wishlist

Toshiba Semiconductor and Storage

SSM6N15AFE,LM

partiture parte: 178067

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

To wishlist

ON Semiconductor

FDG6301N-F085

partiture parte: 2507

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 220mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

To wishlist

ON Semiconductor

NVMFD5485NLWFT3G

partiture parte: 90689

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

To wishlist

ON Semiconductor

NVLJD4007NZTAG

partiture parte: 139596

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 245mA, Rds On (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

To wishlist

ON Semiconductor

EFC6605R-TR

partiture parte: 197820

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, 2.5V Drive,

To wishlist

Infineon Technologies

IPG20N04S4L08AATMA1

partiture parte: 137972

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 22µA,

To wishlist

Infineon Technologies

IPG20N06S415ATMA2

partiture parte: 113173

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 20µA,

To wishlist

Infineon Technologies

IPG20N04S4L11ATMA1

partiture parte: 172926

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 15µA,

To wishlist

Infineon Technologies

IRF7341GTRPBF

partiture parte: 82222

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.1A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

To wishlist

Infineon Technologies

IPG20N04S4L07ATMA1

partiture parte: 104521

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

To wishlist

Infineon Technologies

IRF7314TRPBF

partiture parte: 193267

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

To wishlist

Diodes Incorporated

DMG1023UV-7

partiture parte: 104503

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.03A, Rds On (Max) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist

Diodes Incorporated

DMN2011UFX-7

partiture parte: 171759

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12.2A (Ta), Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

To wishlist

Diodes Incorporated

DMC1017UPD-13

partiture parte: 2684

Tipu FET: N and P-Channel Complementary, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 13A (Ta), 9.4A (Ta), Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, 32 mOhm @ 8.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

To wishlist

Diodes Incorporated

ZXMD63P03XTA

partiture parte: 60635

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

To wishlist

Texas Instruments

CSD88537ND

partiture parte: 132851

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A, Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3.6V @ 250µA,

To wishlist

Panasonic Electronic Components

UP0497900L

partiture parte: 2637

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 50V, 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,

To wishlist

Panasonic Electronic Components

UP0487C00L

partiture parte: 188334

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.3V @ 50µA,

To wishlist