Transistori - FET, MOSFET - Matrici | Prudutti Discreti à Semiconduttore | 3

GWM160-0055X1-SMD

partiture parte: 2839

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 150A, Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

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GWM120-0075X1-SL

partiture parte: 2858

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 75V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 110A, Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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GWM160-0055P3

partiture parte: 2735

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160A, Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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VMM1000-01P

partiture parte: 2737

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1000A, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 800A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

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FMM300-0055P

partiture parte: 2746

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 300A, Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 150A, 10V, Vgs (th) (Max) @ Id: 4V @ 2mA,

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GWM120-0075P3-SMD

partiture parte: 2805

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 75V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 118A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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