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Transistori - FET, MOSFET - Unicu

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  • Transistori - FET, MOSFET - Unicu
NP110N03PUG-E1-AY
Renesas Electronics America

NP110N03PUG-E1-AY

partiture parte: 1145

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 110A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 55A, 10V,

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RJK0653DPB-00#J5
Renesas Electronics America

RJK0653DPB-00#J5

partiture parte: 1199

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 45A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 22.5A, 10V,

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RJK03C1DPB-00#J5
Renesas Electronics America

RJK03C1DPB-00#J5

partiture parte: 1209

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V,

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NP88N03KDG-E1-AY
Renesas Electronics America

NP88N03KDG-E1-AY

partiture parte: 6153

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 88A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 44A, 10V,

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NP80N04KHE-E1-AY
Renesas Electronics America

NP80N04KHE-E1-AY

partiture parte: 1198

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 80A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V,

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NP60N055KUG-E1-AY
Renesas Electronics America

NP60N055KUG-E1-AY

partiture parte: 1211

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 30A, 10V,

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NP90N04MUG-S18-AY
Renesas Electronics America

NP90N04MUG-S18-AY

partiture parte: 1167

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 90A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 mOhm @ 45A, 10V,

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NP60N04KUG-E1-AY
Renesas Electronics America

NP60N04KUG-E1-AY

partiture parte: 1130

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 30A, 10V,

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RJK1053DPB-00#J5
Renesas Electronics America

RJK1053DPB-00#J5

partiture parte: 71554

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 12.5A, 10V,

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RJK2055DPA-00#J0
Renesas Electronics America

RJK2055DPA-00#J0

partiture parte: 1210

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V,

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NP70N10KUF-E1-AY
Renesas Electronics America

NP70N10KUF-E1-AY

partiture parte: 1168

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 70A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V,

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RJK0853DPB-00#J5
Renesas Electronics America

RJK0853DPB-00#J5

partiture parte: 1177

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 80V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V,

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NP50P06KDG-E1-AY
Renesas Electronics America

NP50P06KDG-E1-AY

partiture parte: 1147

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 50A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V,

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RJK1555DPA-00#J0
Renesas Electronics America

RJK1555DPA-00#J0

partiture parte: 49285

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 48 mOhm @ 12.5A, 10V,

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RJK0454DPB-00#J5
Renesas Electronics America

RJK0454DPB-00#J5

partiture parte: 1212

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V,

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RJK1051DPB-00#J5
Renesas Electronics America

RJK1051DPB-00#J5

partiture parte: 125151

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V,

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NP50P04SDG-E1-AY
Renesas Electronics America

NP50P04SDG-E1-AY

partiture parte: 1139

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 50A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 25A, 10V,

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RJK6025DPD-00#J2
Renesas Electronics America

RJK6025DPD-00#J2

partiture parte: 1229

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 17.5 Ohm @ 500mA, 10V,

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RJK0452DPB-00#J5
Renesas Electronics America

RJK0452DPB-00#J5

partiture parte: 1162

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 45A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 22.5A, 10V,

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NP82N055PUG-E1-AY
Renesas Electronics America

NP82N055PUG-E1-AY

partiture parte: 1198

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 82A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 41A, 10V,

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NP160N04TUG-E1-AY
Renesas Electronics America

NP160N04TUG-E1-AY

partiture parte: 1143

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V,

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RJK0328DPB-01#J0
Renesas Electronics America

RJK0328DPB-01#J0

partiture parte: 97122

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V,

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HAT2170H-EL-E
Renesas Electronics America

HAT2170H-EL-E

partiture parte: 898

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 45A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 7V, 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 22.5A, 10V,

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RJK0332DPB-01#J0
Renesas Electronics America

RJK0332DPB-01#J0

partiture parte: 132123

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 35A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V,

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HAT2172H-EL-E
Renesas Electronics America

HAT2172H-EL-E

partiture parte: 6109

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 7V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V,

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HAT1072H-EL-E
Renesas Electronics America

HAT1072H-EL-E

partiture parte: 938

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V,

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RJK0330DPB-01#J0
Renesas Electronics America

RJK0330DPB-01#J0

partiture parte: 121952

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 45A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 22.5A, 10V,

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HAT2141H-EL-E
Renesas Electronics America

HAT2141H-EL-E

partiture parte: 641

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 7V, 10V, Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7.5A, 10V,

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HAT2197R-EL-E
Renesas Electronics America

HAT2197R-EL-E

partiture parte: 322

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 16A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 8A, 10V,

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HAT2175H-EL-E
Renesas Electronics America

HAT2175H-EL-E

partiture parte: 347

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 8V, 10V, Rds On (Max) @ Id, Vgs: 42 mOhm @ 7.5A, 10V,

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HAF1002-90STL-E
Renesas Electronics America

HAF1002-90STL-E

partiture parte: 275

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V,

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HAT2143H-EL-E
Renesas Electronics America

HAT2143H-EL-E

partiture parte: 220

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V,

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HAT2267H-EL-E
Renesas Electronics America

HAT2267H-EL-E

partiture parte: 228

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 80V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10V,

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HAT2140H-EL-E
Renesas Electronics America

HAT2140H-EL-E

partiture parte: 220

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 7V, 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10V,

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HAT2174H-EL-E
Renesas Electronics America

HAT2174H-EL-E

partiture parte: 297

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 8V, 10V, Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V,

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HAT2171H-EL-E
Renesas Electronics America

HAT2171H-EL-E

partiture parte: 50897

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 7V, 10V, Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

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