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Transistori - FET, MOSFET - Unicu

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  • Transistori - FET, MOSFET - Unicu
UPA2600T1R-E2-AX
Renesas Electronics America

UPA2600T1R-E2-AX

partiture parte: 122181

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 19.1 mOhm @ 3.5A, 2.5V,

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RJK1003DPN-E0#T2
Renesas Electronics America

RJK1003DPN-E0#T2

partiture parte: 23631

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 50A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V,

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RJK03M3DPA-00#J5A
Renesas Electronics America

RJK03M3DPA-00#J5A

partiture parte: 100202

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V,

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RJK0655DPB-00#J5
Renesas Electronics America

RJK0655DPB-00#J5

partiture parte: 66667

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 35A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 17.5A, 10V,

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RJK1056DPB-00#J5
Renesas Electronics America

RJK1056DPB-00#J5

partiture parte: 61725

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 12.5A, 10V,

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RJK03M1DPA-00#J5A
Renesas Electronics America

RJK03M1DPA-00#J5A

partiture parte: 78381

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 50A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V,

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N0434N-S23-AY
Renesas Electronics America

N0434N-S23-AY

partiture parte: 88699

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V,

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RJK1575DPA-00#J5A
Renesas Electronics America

RJK1575DPA-00#J5A

partiture parte: 49334

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 48 mOhm @ 12.5A, 10V,

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RJK0456DPB-00#J5
Renesas Electronics America

RJK0456DPB-00#J5

partiture parte: 61702

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 50A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V,

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N0602N-S19-AY
Renesas Electronics America

N0602N-S19-AY

partiture parte: 34067

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V,

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RJK4532DPD-00#J2
Renesas Electronics America

RJK4532DPD-00#J2

partiture parte: 130028

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 450V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2A, 10V,

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RJK4002DJE-00#Z0
Renesas Electronics America

RJK4002DJE-00#Z0

partiture parte: 161273

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 1.5A, 10V,

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UPA2737GR-E1-AT
Renesas Electronics America

UPA2737GR-E1-AT

partiture parte: 189730

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V,

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N0604N-S19-AY
Renesas Electronics America

N0604N-S19-AY

partiture parte: 87486

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 82A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 41A, 10V,

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N0412N-S19-AY
Renesas Electronics America

N0412N-S19-AY

partiture parte: 41671

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V,

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RJK1054DPB-00#J5
Renesas Electronics America

RJK1054DPB-00#J5

partiture parte: 77174

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V,

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UPA2820T1S-E2-AT
Renesas Electronics America

UPA2820T1S-E2-AT

partiture parte: 152392

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 22A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 22A, 10V,

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RJK03M5DNS-00#J5
Renesas Electronics America

RJK03M5DNS-00#J5

partiture parte: 64276

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 12.5A, 10V,

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RJK2076DPA-00#J5A
Renesas Electronics America

RJK2076DPA-00#J5A

partiture parte: 56749

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 85 mOhm @ 10A, 10V,

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UPA2822T1L-E1-AT
Renesas Electronics America

UPA2822T1L-E1-AT

partiture parte: 122003

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 34A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 34A, 10V,

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RJK2075DPA-00#J5A
Renesas Electronics America

RJK2075DPA-00#J5A

partiture parte: 59396

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V,

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RJK5033DPD-00#J2
Renesas Electronics America

RJK5033DPD-00#J2

partiture parte: 79552

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V,

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RJK5030DPP-M0#T2
Renesas Electronics America

RJK5030DPP-M0#T2

partiture parte: 37967

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V,

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UPA2816T1S-E2-AT
Renesas Electronics America

UPA2816T1S-E2-AT

partiture parte: 160053

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 17A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V,

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UPA2814T1S-E2-AT
Renesas Electronics America

UPA2814T1S-E2-AT

partiture parte: 143934

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 24A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 24A, 5V,

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RJK4002DPD-00#J2
Renesas Electronics America

RJK4002DPD-00#J2

partiture parte: 129997

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 1.5A, 10V,

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RJK03M2DPA-00#J5A
Renesas Electronics America

RJK03M2DPA-00#J5A

partiture parte: 97493

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 45A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 22.5A, 10V,

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RJK03M4DPA-00#J5A
Renesas Electronics America

RJK03M4DPA-00#J5A

partiture parte: 106426

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 35A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 17.5A, 10V,

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RJK0393DPA-00#J5A
Renesas Electronics America

RJK0393DPA-00#J5A

partiture parte: 105714

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V,

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UPA2630T1R-E2-AX
Renesas Electronics America

UPA2630T1R-E2-AX

partiture parte: 118519

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 1.8V,

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RJK0349DSP-00#J0
Renesas Electronics America

RJK0349DSP-00#J0

partiture parte: 131033

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 10A, 10V,

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UPA2631T1R-E2-AX
Renesas Electronics America

UPA2631T1R-E2-AX

partiture parte: 104238

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 62 mOhm @ 3A, 1.8V,

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RJK0656DPB-00#J5
Renesas Electronics America

RJK0656DPB-00#J5

partiture parte: 61708

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V,

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RJK0355DSP-00#J0
Renesas Electronics America

RJK0355DSP-00#J0

partiture parte: 186642

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V,

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UPA2815T1S-E2-AT
Renesas Electronics America

UPA2815T1S-E2-AT

partiture parte: 162321

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 21A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 21A, 10V,

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RJK5033DPP-M0#T2
Renesas Electronics America

RJK5033DPP-M0#T2

partiture parte: 30545

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V,

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