Transistori - FET, MOSFET - Matrici

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Transistori - FET, MOSFET - Matrici

Rohm Semiconductor

EM6K33T2R

partiture parte: 182538

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, 1.2V Drive, Scaricamentu à a Tensione di Sorgente (Vdss): 50V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SP8M4FRATB

partiture parte: 91

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A (Ta), 7A (Ta), Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K31FRATB

partiture parte: 99

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS6K1TR

partiture parte: 117098

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1A, Rds On (Max) @ Id, Vgs: 238 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

QS8J4TR

partiture parte: 171717

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K3TB

partiture parte: 123516

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8KA4TB

partiture parte: 198737

Tipu FET: 2 N-Channel (Dual), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A, Rds On (Max) @ Id, Vgs: 21.4 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8J2FU6TB

partiture parte: 120135

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SM6K2T110

partiture parte: 120997

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UT6J3TCR

partiture parte: 114339

Tipu FET: 2 P-Channel (Dual), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

UT6K3TCR

partiture parte: 167007

Tipu FET: 2 N-Channel (Dual), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.5A, Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

US6M11TR

partiture parte: 108081

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.5A, 1.3A, Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SH8K3TB1

partiture parte: 55153

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UT6JA2TCR

partiture parte: 157843

Tipu FET: 2 P-Channel (Dual), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8J65TB1

partiture parte: 100136

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UM6K33NTN

partiture parte: 191317

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, 1.2V Drive, Scaricamentu à a Tensione di Sorgente (Vdss): 50V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

US6J2TR

partiture parte: 151598

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1A, Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

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Rohm Semiconductor

TT8J1TR

partiture parte: 2958

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SH8K1TB1

partiture parte: 189574

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UT6MA3TCR

partiture parte: 168810

Tipu FET: N and P-Channel, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A, 5.5A, Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

US6K4TR

partiture parte: 182371

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

QS8M51TR

partiture parte: 132178

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A, 1.5A, Rds On (Max) @ Id, Vgs: 325 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

HP8K22TB

partiture parte: 139519

Tipu FET: 2 N-Channel (Half Bridge), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 27A, 57A, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8J5FU6TB

partiture parte: 68274

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8K32TB1

partiture parte: 109582

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UM6K31NFHATCN

partiture parte: 9908

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

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Rohm Semiconductor

SH8M5TB1

partiture parte: 102075

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, 7A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M3FU6TB

partiture parte: 134363

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A, 4.5A, Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

MP6K13TCR

partiture parte: 2950

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS6M4TR

partiture parte: 185861

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

SH8M3TB1

partiture parte: 180841

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A, 4.5A, Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8M41TB1

partiture parte: 127833

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 80V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A, 2.6A, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QH8KA4TCR

partiture parte: 78816

Tipu FET: 2 N-Channel (Dual), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

TT8J21TR

partiture parte: 169061

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SH8J66TB1

partiture parte: 75609

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A, Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

MP6M11TCR

partiture parte: 2920

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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