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Diodi - Raddrizzatori - Matrici

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VS-MBRB4045CTPBF
Vishay Semiconductor Diodes Division

VS-MBRB4045CTPBF

partiture parte: 22913

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 600mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-115CNQ015ASMPBF
Vishay Semiconductor Diodes Division

VS-115CNQ015ASMPBF

partiture parte: 10483

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 15V, Current - Mediu Rettificatu (Io) (per Diode): 55A, Tensione - Avanti (Vf) (Max) @ Se: 460mV @ 110A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MURD620CTTRR
Vishay Semiconductor Diodes Division

MURD620CTTRR

partiture parte: 5470

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 3A, Tensione - Avanti (Vf) (Max) @ Se: 1.2V @ 3A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-40CTQ045-1PBF
Vishay Semiconductor Diodes Division

VS-40CTQ045-1PBF

partiture parte: 57477

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 530mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HFA100MD60C
Vishay Semiconductor Diodes Division

HFA100MD60C

partiture parte: 4374

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 83A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.4V @ 50A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HFA60MB60C
Vishay Semiconductor Diodes Division

HFA60MB60C

partiture parte: 3669

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 50A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.5V @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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IRKD166/12
Vishay Semiconductor Diodes Division

IRKD166/12

partiture parte: 3588

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 165A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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VS-88CNQ060APBF
Vishay Semiconductor Diodes Division

VS-88CNQ060APBF

partiture parte: 3776

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 40A, Tensione - Avanti (Vf) (Max) @ Se: 580mV @ 40A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBR2090CTPBF
Vishay Semiconductor Diodes Division

VS-MBR2090CTPBF

partiture parte: 3694

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 800mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBR3045WTPBF
Vishay Semiconductor Diodes Division

VS-MBR3045WTPBF

partiture parte: 60479

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 760mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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FEP16CT/45
Vishay Semiconductor Diodes Division

FEP16CT/45

partiture parte: 3537

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-80CNQ035ASLPBF
Vishay Semiconductor Diodes Division

VS-80CNQ035ASLPBF

partiture parte: 11583

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 40A, Tensione - Avanti (Vf) (Max) @ Se: 520mV @ 40A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VSKD270-16
Vishay Semiconductor Diodes Division

VSKD270-16

partiture parte: 3607

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 1600V, Current - Mediu Rettificatu (Io) (per Diode): 270A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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IRKJ71/14A
Vishay Semiconductor Diodes Division

IRKJ71/14A

partiture parte: 3556

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 1400V, Current - Mediu Rettificatu (Io) (per Diode): 80A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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MURB2020CT
Vishay Semiconductor Diodes Division

MURB2020CT

partiture parte: 3678

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 850mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HFA70NC60CSL
Vishay Semiconductor Diodes Division

HFA70NC60CSL

partiture parte: 3629

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 56A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.5V @ 35A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-80CPQ150PBF
Vishay Semiconductor Diodes Division

VS-80CPQ150PBF

partiture parte: 9992

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 40A, Tensione - Avanti (Vf) (Max) @ Se: 860mV @ 40A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRB3045CTTRL
Vishay Semiconductor Diodes Division

MBRB3045CTTRL

partiture parte: 3635

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 600mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MURB1020CT-1PBF
Vishay Semiconductor Diodes Division

VS-MURB1020CT-1PBF

partiture parte: 91688

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 5A, Tensione - Avanti (Vf) (Max) @ Se: 990mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MURB1020CTTRR
Vishay Semiconductor Diodes Division

MURB1020CTTRR

partiture parte: 3679

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 5A, Tensione - Avanti (Vf) (Max) @ Se: 990mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HFA80NC40CSM
Vishay Semiconductor Diodes Division

HFA80NC40CSM

partiture parte: 3574

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 85A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.5V @ 80A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRB1535CT
Vishay Semiconductor Diodes Division

MBRB1535CT

partiture parte: 3652

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 7.5A, Tensione - Avanti (Vf) (Max) @ Se: 570mV @ 7.5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VSKJ320-20
Vishay Semiconductor Diodes Division

VSKJ320-20

partiture parte: 3605

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 2000V, Current - Mediu Rettificatu (Io) (per Diode): 320A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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VS-80CNQ035ASMPBF
Vishay Semiconductor Diodes Division

VS-80CNQ035ASMPBF

partiture parte: 11510

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 40A, Tensione - Avanti (Vf) (Max) @ Se: 520mV @ 40A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-110CNQ045ASMPBF
Vishay Semiconductor Diodes Division

VS-110CNQ045ASMPBF

partiture parte: 10251

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 110A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 110A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBR1535CTPBF
Vishay Semiconductor Diodes Division

VS-MBR1535CTPBF

partiture parte: 94715

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 7.5A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-30CTH03PBF
Vishay Semiconductor Diodes Division

VS-30CTH03PBF

partiture parte: 44739

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 300V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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IRKD71/04A
Vishay Semiconductor Diodes Division

IRKD71/04A

partiture parte: 3568

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 80A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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VS-83CNQ080ASLPBF
Vishay Semiconductor Diodes Division

VS-83CNQ080ASLPBF

partiture parte: 11296

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 40A, Tensione - Avanti (Vf) (Max) @ Se: 810mV @ 40A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HFA80NK40C
Vishay Semiconductor Diodes Division

HFA80NK40C

partiture parte: 3615

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 89A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.5V @ 80A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VSKD320-04
Vishay Semiconductor Diodes Division

VSKD320-04

partiture parte: 3623

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 320A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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MUR1620CT
Vishay Semiconductor Diodes Division

MUR1620CT

partiture parte: 3576

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 8A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-40L40CWPBF
Vishay Semiconductor Diodes Division

VS-40L40CWPBF

partiture parte: 29726

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 530mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSD2004C-HE3-08
Vishay Semiconductor Diodes Division

GSD2004C-HE3-08

partiture parte: 109437

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 240V, Current - Mediu Rettificatu (Io) (per Diode): 225mA, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 100mA, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2035CT-1
Vishay Semiconductor Diodes Division

MBR2035CT-1

partiture parte: 3639

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-40L15CTSPBF
Vishay Semiconductor Diodes Division

VS-40L15CTSPBF

partiture parte: 16346

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 15V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 410mV @ 19A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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