A family of high-performance FET UNITEDSIC transistors based on a cascode configuration, made with the use of SiC technology. A JFET (SiC) transistor and Si-MOSFET transistor are optimally connected in one housing, which results in a unique and easy-to-apply switching cascode. It can be successfully used in applications with high operating frequency and demanding thermal conditions, in which they can replace MOSFET or IGBT transistors.
Features:
- low resistance in switch-on state,
- operating temperature of up to 175°C,
- short switch-off time,
- low gate capacity,
- reverse voltage of up to 650V,
- low internal thermal resistance,
- internal ESD protection.
Typical applications: motor drivers, impulse power supplies, power factor correction systems, inductive loads, inverters and converters for solar panels.
| Symbol | Description |
| UF3C065030K3S | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A |
| UF3C065030K4S | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A |
| UF3C065040K3S | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A |
| UF3C065080K4S | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A |
| UJ3C065030B3 | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A |
| UJ3C065030K3S | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A |
| UJ3C065030T3S | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A |
| UJ3C065080B3 | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V |
| UJ3C065080K3S | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A |
| UJ3C065080T3S | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A |