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Diodi - Raddrizzatori - Matrici

RB088NS100FHTL
Rohm Semiconductor

RB088NS100FHTL

partiture parte: 75

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 870mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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UMR12NTN
Rohm Semiconductor

UMR12NTN

partiture parte: 104990

Configurazione Diode: 2 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 100mA, Tensione - Avanti (Vf) (Max) @ Se: 1.2V @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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MBRS15200CT-Y MNG
Taiwan Semiconductor Corporation

MBRS15200CT-Y MNG

partiture parte: 112

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 7.5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF3050CT C0G
Taiwan Semiconductor Corporation

MBRF3050CT C0G

partiture parte: 86

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS20200CT-Y MNG
Taiwan Semiconductor Corporation

MBRS20200CT-Y MNG

partiture parte: 173

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 990mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HER1005G C0G
Taiwan Semiconductor Corporation

HER1005G C0G

partiture parte: 90

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.3V @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRS10100 MNG
Taiwan Semiconductor Corporation

SRS10100 MNG

partiture parte: 82

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR1535CT C0G
Taiwan Semiconductor Corporation

MBR1535CT C0G

partiture parte: 114

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS1090CTHMNG
Taiwan Semiconductor Corporation

MBRS1090CTHMNG

partiture parte: 85

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRF1090 C0G
Taiwan Semiconductor Corporation

SRF1090 C0G

partiture parte: 168

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2590CTHC0G
Taiwan Semiconductor Corporation

MBR2590CTHC0G

partiture parte: 126

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 25A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR25100CT C0G
Taiwan Semiconductor Corporation

MBR25100CT C0G

partiture parte: 113

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 25A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF10200CTHC0G
Taiwan Semiconductor Corporation

MBRF10200CTHC0G

partiture parte: 163

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 980mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR20200PTHC0G
Taiwan Semiconductor Corporation

MBR20200PTHC0G

partiture parte: 83

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1.02V @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2060CT C0G
Taiwan Semiconductor Corporation

MBR2060CT C0G

partiture parte: 125

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS10H150CT MNG
Taiwan Semiconductor Corporation

MBRS10H150CT MNG

partiture parte: 93

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 970mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HER1008G C0G
Taiwan Semiconductor Corporation

HER1008G C0G

partiture parte: 152

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR3040PT C0G
Taiwan Semiconductor Corporation

SR3040PT C0G

partiture parte: 123

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
FST30100
Microsemi Corporation

FST30100

partiture parte: 15979

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 850mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-47CTQ020-1-M3
Vishay Semiconductor Diodes Division

VS-47CTQ020-1-M3

partiture parte: 67559

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 20V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 450mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBRB2080CTRHM3
Vishay Semiconductor Diodes Division

VS-MBRB2080CTRHM3

partiture parte: 72578

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 800mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-16CTQ100-1-M3
Vishay Semiconductor Diodes Division

VS-16CTQ100-1-M3

partiture parte: 86952

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 8A, Tensione - Avanti (Vf) (Max) @ Se: 720mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-32CTQ030STRRHM3
Vishay Semiconductor Diodes Division

VS-32CTQ030STRRHM3

partiture parte: 52467

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 490mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-20CTQ035HN3
Vishay Semiconductor Diodes Division

VS-20CTQ035HN3

partiture parte: 49342

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 10A (DC), Tensione - Avanti (Vf) (Max) @ Se: 570mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBRB20100CTLHM3
Vishay Semiconductor Diodes Division

VS-MBRB20100CTLHM3

partiture parte: 72585

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 800mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-40CPQ060-N3
Vishay Semiconductor Diodes Division

VS-40CPQ060-N3

partiture parte: 15163

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 40A, Tensione - Avanti (Vf) (Max) @ Se: 680mV @ 40A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF10200CT-JT
Diodes Incorporated

MBRF10200CT-JT

partiture parte: 113089

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 5A, Tensione - Avanti (Vf) (Max) @ Se: 910mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR2050CT-G
Comchip Technology

MBR2050CT-G

partiture parte: 114599

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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CDBT-40S-G
Comchip Technology

CDBT-40S-G

partiture parte: 190055

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 200mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 40mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

To wishlist
CDBD2040-G
Comchip Technology

CDBD2040-G

partiture parte: 111181

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 20A (DC), Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
NRVHP8H200MFDWFT1G
ON Semiconductor

NRVHP8H200MFDWFT1G

partiture parte: 78

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 4A, Tensione - Avanti (Vf) (Max) @ Se: 910mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBRB20H100CTT4G
ON Semiconductor

MBRB20H100CTT4G

partiture parte: 99761

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 770mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
HN2S02JE(TE85L,F)
Toshiba Semiconductor and Storage

HN2S02JE(TE85L,F)

partiture parte: 151

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 100mA, Tensione - Avanti (Vf) (Max) @ Se: 600mV @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

To wishlist
HN2S01FUTE85LF
Toshiba Semiconductor and Storage

HN2S01FUTE85LF

partiture parte: 111

Configurazione Diode: 3 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 10V, Current - Mediu Rettificatu (Io) (per Diode): 100mA, Tensione - Avanti (Vf) (Max) @ Se: 500mV @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

To wishlist
HN1D02F(TE85L,F)
Toshiba Semiconductor and Storage

HN1D02F(TE85L,F)

partiture parte: 99

Configurazione Diode: 2 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 100mA, Tensione - Avanti (Vf) (Max) @ Se: 1.2V @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

To wishlist
DB3X315E0L
Panasonic Electronic Components

DB3X315E0L

partiture parte: 108903

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 30mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 30mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

To wishlist