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Diodi - Raddrizzatori - Matrici

RF1601NS2DFHTL
Rohm Semiconductor

RF1601NS2DFHTL

partiture parte: 163

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 930mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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RB425DFHT146
Rohm Semiconductor

RB425DFHT146

partiture parte: 116312

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 50mA, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 100mA, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS15100CT MNG
Taiwan Semiconductor Corporation

MBRS15100CT MNG

partiture parte: 148

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 7.5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRS1660HMNG
Taiwan Semiconductor Corporation

SRS1660HMNG

partiture parte: 111

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HERF1008G C0G
Taiwan Semiconductor Corporation

HERF1008G C0G

partiture parte: 164

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR1050CT C0G
Taiwan Semiconductor Corporation

MBR1050CT C0G

partiture parte: 73

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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UG1004GHC0G
Taiwan Semiconductor Corporation

UG1004GHC0G

partiture parte: 112

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRF20100HC0G
Taiwan Semiconductor Corporation

SRF20100HC0G

partiture parte: 121

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR1660PTHC0G
Taiwan Semiconductor Corporation

SR1660PTHC0G

partiture parte: 119

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS20150CT-Y MNG
Taiwan Semiconductor Corporation

MBRS20150CT-Y MNG

partiture parte: 153

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 990mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS1090CT MNG
Taiwan Semiconductor Corporation

MBRS1090CT MNG

partiture parte: 94

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRF1090HC0G
Taiwan Semiconductor Corporation

SRF1090HC0G

partiture parte: 131

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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UG1004G C0G
Taiwan Semiconductor Corporation

UG1004G C0G

partiture parte: 100

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GP1607 C0G
Taiwan Semiconductor Corporation

GP1607 C0G

partiture parte: 141

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 1.1V @ 8A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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SRF2050 C0G
Taiwan Semiconductor Corporation

SRF2050 C0G

partiture parte: 138

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR20150 C0G
Taiwan Semiconductor Corporation

SR20150 C0G

partiture parte: 139

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR2040 C0G
Taiwan Semiconductor Corporation

SR2040 C0G

partiture parte: 78

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SS8P2CL-M3/86A
Vishay Semiconductor Diodes Division

SS8P2CL-M3/86A

partiture parte: 116820

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 20V, Current - Mediu Rettificatu (Io) (per Diode): 4A, Tensione - Avanti (Vf) (Max) @ Se: 540mV @ 4A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBRB4045CTRHM3
Vishay Semiconductor Diodes Division

VS-MBRB4045CTRHM3

partiture parte: 51216

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 600mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-6CWQ06FNTRHM3
Vishay Semiconductor Diodes Division

VS-6CWQ06FNTRHM3

partiture parte: 83406

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 3.5A, Tensione - Avanti (Vf) (Max) @ Se: 610mV @ 3A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-12CWQ10FNTRR-M3
Vishay Semiconductor Diodes Division

VS-12CWQ10FNTRR-M3

partiture parte: 179327

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 6A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 12A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBRB2090CTHM3
Vishay Semiconductor Diodes Division

VS-MBRB2090CTHM3

partiture parte: 87641

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 800mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SS8P6C-M3/87A
Vishay Semiconductor Diodes Division

SS8P6C-M3/87A

partiture parte: 156747

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 4A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 4A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-6CWQ10FNTRLHM3
Vishay Semiconductor Diodes Division

VS-6CWQ10FNTRLHM3

partiture parte: 81352

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 3.5A, Tensione - Avanti (Vf) (Max) @ Se: 810mV @ 3A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-40L40CW-N3
Vishay Semiconductor Diodes Division

VS-40L40CW-N3

partiture parte: 11518

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 530mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SS8P3C-M3/87A
Vishay Semiconductor Diodes Division

SS8P3C-M3/87A

partiture parte: 190422

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 4A, Tensione - Avanti (Vf) (Max) @ Se: 580mV @ 4A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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V10KM120DU-M3/H
Vishay Semiconductor Diodes Division

V10KM120DU-M3/H

partiture parte: 164483

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 120V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 890mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SS12P4CHM3_A/H
Vishay Semiconductor Diodes Division

SS12P4CHM3_A/H

partiture parte: 156818

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 6A, Tensione - Avanti (Vf) (Max) @ Se: 520mV @ 6A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBRB2080CTHM3
Vishay Semiconductor Diodes Division

VS-MBRB2080CTHM3

partiture parte: 87595

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 800mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SS10P3CLHM3_A/I
Vishay Semiconductor Diodes Division

SS10P3CLHM3_A/I

partiture parte: 123071

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 5A, Tensione - Avanti (Vf) (Max) @ Se: 530mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
MBR3045CTE3/TU
Microsemi Corporation

MBR3045CTE3/TU

partiture parte: 83378

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

To wishlist
STTH602CBY-TR
STMicroelectronics

STTH602CBY-TR

partiture parte: 175500

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 3A, Tensione - Avanti (Vf) (Max) @ Se: 1.1V @ 3A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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TBAV99,LM
Toshiba Semiconductor and Storage

TBAV99,LM

partiture parte: 196401

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 100mA, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 150mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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DA37102D0L
Panasonic Electronic Components

DA37102D0L

partiture parte: 124296

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 100mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.2V @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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PMEG3020CPA,115
Nexperia USA Inc.

PMEG3020CPA,115

partiture parte: 189780

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 2A, Tensione - Avanti (Vf) (Max) @ Se: 440mV @ 2A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MSRTA500120(A)
GeneSiC Semiconductor

MSRTA500120(A)

partiture parte: 811

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 500A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.2V @ 500A, Velocità: Standard Recovery >500ns, > 200mA (Io),

To wishlist