Transistori - FET, MOSFET - Matrici | Prudutti Discreti à Semiconduttore | 11

BSL207NL6327HTSA1

partiture parte: 2845

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.1A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 11µA,

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BSL308PEL6327HTSA1

partiture parte: 3339

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 1V @ 11µA,

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BSL308CL6327HTSA1

partiture parte: 2842

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.3A, 2A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

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BSL314PEL6327HTSA1

partiture parte: 3308

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 6.3µA,

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BSD840N L6327

partiture parte: 2834

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 880mA, Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V, Vgs (th) (Max) @ Id: 750mV @ 1.6µA,

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BSL306NL6327HTSA1

partiture parte: 3344

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

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BSL315PL6327HTSA1

partiture parte: 2825

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

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BSL215CL6327HTSA1

partiture parte: 2784

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 3.7µA,

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BSL215PL6327HTSA1

partiture parte: 2866

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 11µA,

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BSL205NL6327HTSA1

partiture parte: 5353

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 11µA,

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BSD235N L6327

partiture parte: 3373

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 950mA, Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.6µA,

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BSL214NL6327HTSA1

partiture parte: 2788

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 3.7µA,

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BSL316CL6327HTSA1

partiture parte: 2849

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.4A, 1.5A, Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 2V @ 3.7µA,

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BSD235C L6327

partiture parte: 2795

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 950mA, 530mA, Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.6µA,

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BTS7904BATMA1

partiture parte: 2849

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A, Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 40µA,

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BSD223P L6327

partiture parte: 2843

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 390mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.5µA,

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BSO200N03

partiture parte: 2769

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.6A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.9A, 10V, Vgs (th) (Max) @ Id: 2V @ 13µA,

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BSO350N03

partiture parte: 2710

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 6µA,

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BSO150N03

partiture parte: 2753

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.6A, Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V, Vgs (th) (Max) @ Id: 2V @ 25µA,

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BSO303PNTMA1

partiture parte: 2695

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.2A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V, Vgs (th) (Max) @ Id: 2V @ 100µA,

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BSO615CT

partiture parte: 2762

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.1A, 2A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2V @ 20µA,

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BSO4804T

partiture parte: 2714

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2V @ 30µA,

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BSO612CV

partiture parte: 2724

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A, 2A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 4V @ 20µA,

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BSO615N

partiture parte: 2704

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.6A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 20µA,

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BSO215C

partiture parte: 2649

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.7A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.7A, 10V, Vgs (th) (Max) @ Id: 2V @ 10µA,

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BSO4804

partiture parte: 2708

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2V @ 30µA,

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BSO207PNTMA1

partiture parte: 2681

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.7A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 40µA,

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BSO203PNTMA1

partiture parte: 2677

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.2A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 100µA,

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BSO204PNTMA1

partiture parte: 2710

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 60µA,

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BSD223P

partiture parte: 3281

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 390mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.5µA,

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BSD235NH6327XTSA1

partiture parte: 196176

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 950mA, Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1.6µA,

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BSO211PNTMA1

partiture parte: 2608

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.7A, Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 25µA,

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BSO220N03MDGXUMA1

partiture parte: 21576

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

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BSC150N03LDGATMA1

partiture parte: 32315

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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BSO150N03MDGXUMA1

partiture parte: 53402

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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BSG0810NDIATMA1

partiture parte: 66407

Tipu FET: 2 N-Channel (Dual) Asymmetrical, Funzione FET: Logic Level Gate, 4.5V Drive, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 19A, 39A, Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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