Transistori - FET, MOSFET - Matrici | Prudutti Discreti à Semiconduttore | 11

IRF7328TRPBF

partiture parte: 121945

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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Infineon Technologies

IRF7380QTRPBF

partiture parte: 2971

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 80V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Infineon Technologies

IRF7341QTRPBF

partiture parte: 2975

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.1A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF5810TRPBF

partiture parte: 3074

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.9A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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Infineon Technologies

IRF7904PBF

partiture parte: 75561

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.6A, 11A, Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 2.25V @ 25µA,

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Infineon Technologies

IRF7343TRPBF

partiture parte: 191306

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.7A, 3.4A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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IRL6372TRPBF

partiture parte: 136919

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.1A, Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 10µA,

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DF11MR12W1M1B11BOMA1

partiture parte: 229

Tipu FET: 2 N-Channel (Dual), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 50A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 50A, 15V, Vgs (th) (Max) @ Id: 5.5V @ 20mA,

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IRF9952TRPBF

partiture parte: 110076

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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IRFI4019H-117P

partiture parte: 26279

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.7A, Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V, Vgs (th) (Max) @ Id: 4.9V @ 50µA,

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IRF7303PBF

partiture parte: 77937

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.9A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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IPG20N06S4L14ATMA1

partiture parte: 2973

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

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IRFH4253DTRPBF

partiture parte: 74468

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 64A, 145A, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

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IRF7380TRPBF

partiture parte: 159831

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 80V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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IRF9956PBF

partiture parte: 2963

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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DF23MR12W1M1B11BOMA1

partiture parte: 3162

Tipu FET: 2 N-Channel (Dual), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 15V, Vgs (th) (Max) @ Id: 5.5V @ 10mA,

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IRF7306TRPBF

partiture parte: 134048

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7309PBF

partiture parte: 123498

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, 3A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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IRF8910TRPBF

partiture parte: 184858

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A, Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

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IRF8915TRPBF

partiture parte: 198689

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.9A, Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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IRF7755TRPBF

partiture parte: 2972

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.9A, Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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IRF7101TRPBF

partiture parte: 197154

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Infineon Technologies

IRF7389PBF

partiture parte: 49826

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Infineon Technologies

IRLHS6276TR2PBF

partiture parte: 2990

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 10µA,

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Infineon Technologies

IRF3546MTRPBF

partiture parte: 18707

Tipu FET: 4 N-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 16A (Tc), 20A (Tc), Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 27A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,

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Infineon Technologies

IPG20N06S2L65AATMA1

partiture parte: 158126

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 55V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2V @ 14µA,

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IRFI4212H-117P

partiture parte: 32918

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11A, Rds On (Max) @ Id, Vgs: 72.5 mOhm @ 6.6A, 10V, Vgs (th) (Max) @ Id: 5V @ 250µA,

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IRF7501TRPBF

partiture parte: 166411

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.4A, Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7329PBF

partiture parte: 48234

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9.2A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

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IRF7555TRPBF

partiture parte: 2960

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.3A, Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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Infineon Technologies

IRF7325TRPBF

partiture parte: 2988

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.8A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

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Infineon Technologies

IRL6372PBF

partiture parte: 2978

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.1A, Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 10µA,

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Infineon Technologies

IRFI4019HG-117P

partiture parte: 3354

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.7A, Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V, Vgs (th) (Max) @ Id: 4.9V @ 50µA,

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Infineon Technologies

IRFI4020H-117P

partiture parte: 21018

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9.1A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.5A, 10V, Vgs (th) (Max) @ Id: 4.9V @ 100µA,

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Infineon Technologies

FF11MR12W1M1B11BOMA1

partiture parte: 3093

Tipu FET: 2 N-Channel (Dual), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A, Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 5.55V @ 40mA,

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Infineon Technologies

IRF6723M2DTR1P

partiture parte: 3004

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A, Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

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