Transistori - FET, MOSFET - Unicu

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Transistori - FET, MOSFET - Unicu

Taiwan Semiconductor Corporation

TSM1N80CW RPG

partiture parte: 130

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 300mA (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 21.6 Ohm @ 150mA, 10V,

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Taiwan Semiconductor Corporation

TSM4806CS RLG

partiture parte: 220

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 28A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 4.5V,

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Taiwan Semiconductor Corporation

TSM4NC50CP ROG

partiture parte: 241

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.7A, 10V,

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TSM160P04LCRHRLG

Taiwan Semiconductor Corporation

TSM160P04LCRHRLG

partiture parte: 272

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 51A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V,

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TSM10NC60CF C0G

Taiwan Semiconductor Corporation

TSM10NC60CF C0G

partiture parte: 246

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.5A, 10V,

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TSM500P02CX RFG

Taiwan Semiconductor Corporation

TSM500P02CX RFG

partiture parte: 214

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.7A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 50 mOhm @ 3A, 4.5V,

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Taiwan Semiconductor Corporation

TSM126CX RFG

partiture parte: 281

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30mA (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 800 Ohm @ 16mA, 10V,

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TSM900N06CP ROG

Taiwan Semiconductor Corporation

TSM900N06CP ROG

partiture parte: 253

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 6A, 10V,

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TSM042N03CS RLG

Taiwan Semiconductor Corporation

TSM042N03CS RLG

partiture parte: 256

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 12A, 10V,

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TSM2N7000KCT A3G

Taiwan Semiconductor Corporation

TSM2N7000KCT A3G

partiture parte: 196

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 300mA (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 10V,

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TSM950N10CW RPG

Taiwan Semiconductor Corporation

TSM950N10CW RPG

partiture parte: 278

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.5A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V,

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Taiwan Semiconductor Corporation

TSM60N06CP ROG

partiture parte: 291

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 66A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 30A, 10V,

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TSM061NA03CR RLG

Taiwan Semiconductor Corporation

TSM061NA03CR RLG

partiture parte: 287

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 88A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 16A, 10V,

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TSM120N06LCR RLG

Taiwan Semiconductor Corporation

TSM120N06LCR RLG

partiture parte: 274

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 54A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V,

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TSM650P03CX RFG

Taiwan Semiconductor Corporation

TSM650P03CX RFG

partiture parte: 319

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.1A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 10V,

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TSM60NB190CZ C0G

Taiwan Semiconductor Corporation

TSM60NB190CZ C0G

partiture parte: 315

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 18A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 6A, 10V,

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Taiwan Semiconductor Corporation

TSM4NB60CH X0G

partiture parte: 210

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V,

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TSM033NA03CR RLG

Taiwan Semiconductor Corporation

TSM033NA03CR RLG

partiture parte: 257

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 129A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 21A, 10V,

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TSM061NA03CV RGG

Taiwan Semiconductor Corporation

TSM061NA03CV RGG

partiture parte: 261

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 66A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 16A, 10V,

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TSM680P06CP ROG

Taiwan Semiconductor Corporation

TSM680P06CP ROG

partiture parte: 207

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 18A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 68 mOhm @ 6A, 10V,

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TSM900N10CP ROG

Taiwan Semiconductor Corporation

TSM900N10CP ROG

partiture parte: 212

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 5A, 10V,

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TSM170N06PQ56 RLG

Taiwan Semiconductor Corporation

TSM170N06PQ56 RLG

partiture parte: 244

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 44A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V,

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TSM80N1R2CP ROG

Taiwan Semiconductor Corporation

TSM80N1R2CP ROG

partiture parte: 253

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.5A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.75A, 10V,

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TSM650N15CR RLG

Taiwan Semiconductor Corporation

TSM650N15CR RLG

partiture parte: 310

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 24A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 10V,

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TSM60NB600CP ROG

Taiwan Semiconductor Corporation

TSM60NB600CP ROG

partiture parte: 324

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V,

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TSM60NB1R4CP ROG

Taiwan Semiconductor Corporation

TSM60NB1R4CP ROG

partiture parte: 249

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 10V,

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TSM120N06LCP ROG

Taiwan Semiconductor Corporation

TSM120N06LCP ROG

partiture parte: 275

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 70A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V,

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TSM160N10LCR RLG

Taiwan Semiconductor Corporation

TSM160N10LCR RLG

partiture parte: 271

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 46A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V,

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Taiwan Semiconductor Corporation

TSM05N03CW RPG

partiture parte: 318

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 5A, 10V,

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TSM160P02CS RLG

Taiwan Semiconductor Corporation

TSM160P02CS RLG

partiture parte: 296

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 6A, 4.5V,

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TSM020N04LCR RLG

Taiwan Semiconductor Corporation

TSM020N04LCR RLG

partiture parte: 234

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 170A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2 mOhm @ 27A, 10V,

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TSM150P03PQ33 RGG

Taiwan Semiconductor Corporation

TSM150P03PQ33 RGG

partiture parte: 257

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 36A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V,

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TSM060N03CP ROG

Taiwan Semiconductor Corporation

TSM060N03CP ROG

partiture parte: 284

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 70A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V,

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TSM170N06CH C5G

Taiwan Semiconductor Corporation

TSM170N06CH C5G

partiture parte: 335

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 38A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V,

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Taiwan Semiconductor Corporation

TSM2N100CP ROG

partiture parte: 410

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 1000V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.85A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V,

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TSM70N380CH C5G

Taiwan Semiconductor Corporation

TSM70N380CH C5G

partiture parte: 360

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 700V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.3A, 10V,

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276

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