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Diodi - Raddrizzatori - Matrici

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BAV99W RVG
Taiwan Semiconductor Corporation

BAV99W RVG

partiture parte: 126

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 85V, Current - Mediu Rettificatu (Io) (per Diode): 150mA, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 150mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAT54CD REG
Taiwan Semiconductor Corporation

BAT54CD REG

partiture parte: 154

Configurazione Diode: 2 Pair Common Anode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 200mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAT54BR-G REG
Taiwan Semiconductor Corporation

BAT54BR-G REG

partiture parte: 153

Configurazione Diode: 2 Pair Series Connection, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 200mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAT54AD REG
Taiwan Semiconductor Corporation

BAT54AD REG

partiture parte: 112

Configurazione Diode: 2 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 200mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAT54T REG
Taiwan Semiconductor Corporation

BAT54T REG

partiture parte: 172

Configurazione Diode: 3 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 200mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAT54SD REG
Taiwan Semiconductor Corporation

BAT54SD REG

partiture parte: 179

Configurazione Diode: 2 Pair Series Connection, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 200mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAV99S REG
Taiwan Semiconductor Corporation

BAV99S REG

partiture parte: 126

Configurazione Diode: 2 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 85V, Current - Mediu Rettificatu (Io) (per Diode): 150mA, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 150mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAS70-05 RFG
Taiwan Semiconductor Corporation

BAS70-05 RFG

partiture parte: 245

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 70V, Current - Mediu Rettificatu (Io) (per Diode): 70mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 15mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAS40-04 RFG
Taiwan Semiconductor Corporation

BAS40-04 RFG

partiture parte: 229

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 40mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAS70-04 RFG
Taiwan Semiconductor Corporation

BAS70-04 RFG

partiture parte: 264

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 70V, Current - Mediu Rettificatu (Io) (per Diode): 70mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 15mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAS21C RFG
Taiwan Semiconductor Corporation

BAS21C RFG

partiture parte: 187

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 250V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 200mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAS40-06 RFG
Taiwan Semiconductor Corporation

BAS40-06 RFG

partiture parte: 214

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 40mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAS21A RFG
Taiwan Semiconductor Corporation

BAS21A RFG

partiture parte: 186

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 250V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 200mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAS70-06 RFG
Taiwan Semiconductor Corporation

BAS70-06 RFG

partiture parte: 173

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 70V, Current - Mediu Rettificatu (Io) (per Diode): 70mA (DC), Tensione - Avanti (Vf) (Max) @ Se: 1V @ 15mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAV70 RFG
Taiwan Semiconductor Corporation

BAV70 RFG

partiture parte: 168

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 70V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 150mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAS40-05 RFG
Taiwan Semiconductor Corporation

BAS40-05 RFG

partiture parte: 213

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 40mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAS21S RFG
Taiwan Semiconductor Corporation

BAS21S RFG

partiture parte: 196

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 250V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 200mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAW56 RFG
Taiwan Semiconductor Corporation

BAW56 RFG

partiture parte: 16282

Configurazione Diode: 1 Pair Common Anode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 70V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 150mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAV99 RFG
Taiwan Semiconductor Corporation

BAV99 RFG

partiture parte: 24335

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 70V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 150mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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BAT54S RFG
Taiwan Semiconductor Corporation

BAT54S RFG

partiture parte: 32269

Configurazione Diode: 1 Pair Series Connection, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 200mA, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 100mA, Velocità: Small Signal =< 200mA (Io), Any Speed,

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MBRF2545CTHC0G
Taiwan Semiconductor Corporation

MBRF2545CTHC0G

partiture parte: 86

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 820mV @ 12.5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF2050CT C0G
Taiwan Semiconductor Corporation

MBRF2050CT C0G

partiture parte: 153

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF20L120CTHC0G
Taiwan Semiconductor Corporation

MBRF20L120CTHC0G

partiture parte: 95

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 120V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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UG1006GHC0G
Taiwan Semiconductor Corporation

UG1006GHC0G

partiture parte: 130

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF15150CTHC0G
Taiwan Semiconductor Corporation

MBRF15150CTHC0G

partiture parte: 134

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 7.5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HER1608G C0G
Taiwan Semiconductor Corporation

HER1608G C0G

partiture parte: 121

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HERF1606G C0G
Taiwan Semiconductor Corporation

HERF1606G C0G

partiture parte: 69

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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UGF1606GHC0G
Taiwan Semiconductor Corporation

UGF1606GHC0G

partiture parte: 90

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 1.25V @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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UGF2007G C0G
Taiwan Semiconductor Corporation

UGF2007G C0G

partiture parte: 124

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 500V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF30150CTHC0G
Taiwan Semiconductor Corporation

MBRF30150CTHC0G

partiture parte: 109

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.05V @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MURF1620CT C0G
Taiwan Semiconductor Corporation

MURF1620CT C0G

partiture parte: 151

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 975mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GP1004 C0G
Taiwan Semiconductor Corporation

GP1004 C0G

partiture parte: 149

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.1V @ 5A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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MBRF1545CTHC0G
Taiwan Semiconductor Corporation

MBRF1545CTHC0G

partiture parte: 85

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF10H100CT C0G
Taiwan Semiconductor Corporation

MBRF10H100CT C0G

partiture parte: 134

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS10100CTHMNG
Taiwan Semiconductor Corporation

MBRS10100CTHMNG

partiture parte: 164

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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UG1008G C0G
Taiwan Semiconductor Corporation

UG1008G C0G

partiture parte: 151

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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