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Transistori - FET, MOSFET - Matrici

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  • Transistori - FET, MOSFET - Matrici
SI4936ADY-T1-GE3
Vishay Siliconix

SI4936ADY-T1-GE3

partiture parte: 77137

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.4A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4920DY-T1-E3
Vishay Siliconix

SI4920DY-T1-E3

partiture parte: 2966

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SI1905BDH-T1-E3
Vishay Siliconix

SI1905BDH-T1-E3

partiture parte: 3022

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 8V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 630mA, Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI4904DY-T1-GE3
Vishay Siliconix

SI4904DY-T1-GE3

partiture parte: 68499

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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SI4900DY-T1-GE3
Vishay Siliconix

SI4900DY-T1-GE3

partiture parte: 132105

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SIA907EDJT-T1-GE3
Vishay Siliconix

SIA907EDJT-T1-GE3

partiture parte: 150001

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SI4804CDY-T1-E3
Vishay Siliconix

SI4804CDY-T1-E3

partiture parte: 129067

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI4922BDY-T1-GE3
Vishay Siliconix

SI4922BDY-T1-GE3

partiture parte: 93125

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

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SQJQ900E-T1_GE3
Vishay Siliconix

SQJQ900E-T1_GE3

partiture parte: 69083

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI6963BDQ-T1-E3
Vishay Siliconix

SI6963BDQ-T1-E3

partiture parte: 3001

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SI4539ADY-T1-GE3
Vishay Siliconix

SI4539ADY-T1-GE3

partiture parte: 3314

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.4A, 3.7A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SI4816BDY-T1-E3
Vishay Siliconix

SI4816BDY-T1-E3

partiture parte: 93648

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.8A, 8.2A, Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI1023X-T1-E3
Vishay Siliconix

SI1023X-T1-E3

partiture parte: 2929

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 370mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SQ3987EV-T1_GE3
Vishay Siliconix

SQ3987EV-T1_GE3

partiture parte: 16233

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A (Tc), Rds On (Max) @ Id, Vgs: 133 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI5915DC-T1-E3
Vishay Siliconix

SI5915DC-T1-E3

partiture parte: 2988

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 8V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI3585DV-T1-GE3
Vishay Siliconix

SI3585DV-T1-GE3

partiture parte: 3014

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A, 1.5A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

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SI7956DP-T1-E3
Vishay Siliconix

SI7956DP-T1-E3

partiture parte: 43929

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.6A, Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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SI3552DV-T1-GE3
Vishay Siliconix

SI3552DV-T1-GE3

partiture parte: 189573

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SQJ956EP-T1_GE3
Vishay Siliconix

SQJ956EP-T1_GE3

partiture parte: 9990

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 23A (Tc), Rds On (Max) @ Id, Vgs: 26.7 mOhm @ 5.2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI7940DP-T1-GE3
Vishay Siliconix

SI7940DP-T1-GE3

partiture parte: 2920

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.6A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI4936ADY-T1-E3
Vishay Siliconix

SI4936ADY-T1-E3

partiture parte: 77138

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.4A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI5933CDC-T1-GE3
Vishay Siliconix

SI5933CDC-T1-GE3

partiture parte: 181122

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.7A, Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI7223DN-T1-GE3
Vishay Siliconix

SI7223DN-T1-GE3

partiture parte: 9952

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Tc), Rds On (Max) @ Id, Vgs: 26.4 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI9933CDY-T1-E3
Vishay Siliconix

SI9933CDY-T1-E3

partiture parte: 154905

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SIZ346DT-T1-GE3
Vishay Siliconix

SIZ346DT-T1-GE3

partiture parte: 9988

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 17A (Tc), 30A (Tc), Rds On (Max) @ Id, Vgs: 28.5 mOhm @ 10A, 10V, 11.5 mOhm @ 14.4A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA,

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SIZ728DT-T1-GE3
Vishay Siliconix

SIZ728DT-T1-GE3

partiture parte: 110130

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 16A, 35A, Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SI4288DY-T1-GE3
Vishay Siliconix

SI4288DY-T1-GE3

partiture parte: 118896

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9.2A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI5938DU-T1-E3
Vishay Siliconix

SI5938DU-T1-E3

partiture parte: 2940

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI4650DY-T1-E3
Vishay Siliconix

SI4650DY-T1-E3

partiture parte: 2953

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

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SI5997DU-T1-GE3
Vishay Siliconix

SI5997DU-T1-GE3

partiture parte: 168303

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 54 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SIZ350DT-T1-GE3
Vishay Siliconix

SIZ350DT-T1-GE3

partiture parte: 220

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 18.5A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 6.75 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI4590DY-T1-GE3
Vishay Siliconix

SI4590DY-T1-GE3

partiture parte: 189788

Tipu FET: N and P-Channel, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A, 2.8A, Rds On (Max) @ Id, Vgs: 57 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI3900DV-T1-GE3
Vishay Siliconix

SI3900DV-T1-GE3

partiture parte: 169893

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI1023X-T1-GE3
Vishay Siliconix

SI1023X-T1-GE3

partiture parte: 119178

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 370mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI1902DL-T1-GE3
Vishay Siliconix

SI1902DL-T1-GE3

partiture parte: 162518

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 660mA, Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI4532CDY-T1-GE3
Vishay Siliconix

SI4532CDY-T1-GE3

partiture parte: 107643

Tipu FET: N and P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, 4.3A, Rds On (Max) @ Id, Vgs: 47 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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