Transistori - FET, MOSFET - Matrici | Prudutti Discreti à Semiconduttore | 18

SI4804CDY-T1-GE3

partiture parte: 85201

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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Vishay Siliconix

SI5515DC-T1-GE3

partiture parte: 153475

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.4A, 3A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SQ1902AEL-T1_GE3

partiture parte: 9906

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 780mA (Tc), Rds On (Max) @ Id, Vgs: 415 mOhm @ 660mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI4204DY-T1-GE3

partiture parte: 80891

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 19.8A, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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Vishay Siliconix

SI1034X-T1-GE3

partiture parte: 127515

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 180mA, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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Vishay Siliconix

SI3981DV-T1-E3

partiture parte: 3003

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.6A, Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

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Vishay Siliconix

SQJ910AEP-T1_GE3

partiture parte: 9943

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30A (Tc), Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI7501DN-T1-E3

partiture parte: 3365

Tipu FET: N and P-Channel, Common Drain, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.4A, 4.5A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SIZ980DT-T1-GE3

partiture parte: 16202

Tipu FET: 2 N-Channel (Dual), Schottky, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Tc), 60A (Tc), Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V, 1.6 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SI4909DY-T1-GE3

partiture parte: 158525

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI4925BDY-T1-GE3

partiture parte: 89747

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI8902EDB-T2-E1

partiture parte: 86559

Tipu FET: 2 N-Channel (Dual) Common Drain, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.9A, Vgs (th) (Max) @ Id: 1V @ 980µA,

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Vishay Siliconix

SI3590DV-T1-GE3

partiture parte: 199636

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.5A, 1.7A, Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI7998DP-T1-GE3

partiture parte: 103462

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A, 30A, Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SIA915DJ-T4-GE3

partiture parte: 2966

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.7A (Ta), 4.5A (Tc), Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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SIZ322DT-T1-GE3

partiture parte: 266

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30A (Tc), Rds On (Max) @ Id, Vgs: 6.35 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI5944DU-T1-GE3

partiture parte: 2992

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7997DP-T1-GE3

partiture parte: 69522

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI4818DY-T1-E3

partiture parte: 2959

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.3A, 7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 800mV @ 250µA (Min),

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Vishay Siliconix

SQ4937EY-T1_GE3

partiture parte: 10827

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A (Tc), Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4931DY-T1-E3

partiture parte: 180805

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.7A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 350µA,

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Vishay Siliconix

SI7964DP-T1-E3

partiture parte: 3339

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.1A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

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Vishay Siliconix

SI7220DN-T1-GE3

partiture parte: 86597

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7905DN-T1-GE3

partiture parte: 73616

Tipu FET: 2 P-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SQJ912AEP-T1_GE3

partiture parte: 141553

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30A, Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI3585CDV-T1-GE3

partiture parte: 112724

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.9A, 2.1A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI4830CDY-T1-E3

partiture parte: 135865

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

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Vishay Siliconix

SI5935DC-T1-E3

partiture parte: 3338

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI6969BDQ-T1-GE3

partiture parte: 2845

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

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Vishay Siliconix

SI3585DV-T1-E3

partiture parte: 2733

Tipu FET: N and P-Channel, Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A, 1.5A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),

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Vishay Siliconix

SI4916DY-T1-E3

partiture parte: 159074

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A, 10.5A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI7872DP-T1-E3

partiture parte: 71511

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.4A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI6966DQ-T1-E3

partiture parte: 2873

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SI4992EY-T1-E3

partiture parte: 2722

Tipu FET: 2 N-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 75V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4967DY-T1-GE3

partiture parte: 3379

Tipu FET: 2 P-Channel (Dual), Funzione FET: Logic Level Gate, Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI1972DH-T1-E3

partiture parte: 2739

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

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