Transistori - FET, MOSFET - Matrici

CAS300M17BM2

CAS300M17BM2

partiture parte: 115

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1700V (1.7kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 325A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 15mA (Typ),

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CAS300M12BM2

CAS300M12BM2

partiture parte: 138

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 423A (Tc), Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 15mA (Typ),

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CCS050M12CM2

CCS050M12CM2

partiture parte: 184

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 87A (Tc), Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2.5mA,

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CCS020M12CM2

CCS020M12CM2

partiture parte: 413

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 29.5A (Tc), Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 1mA (Typ),

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CAS120M12BM2

CAS120M12BM2

partiture parte: 257

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 193A (Tc), Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V, Vgs (th) (Max) @ Id: 2.6V @ 6mA (Typ),

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CAS325M12HM2

CAS325M12HM2

partiture parte: 70

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 444A (Tc), Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V, Vgs (th) (Max) @ Id: 4V @ 105mA,

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CAS100H12AM1

CAS100H12AM1

partiture parte: 3335

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 168A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V, Vgs (th) (Max) @ Id: 3.1V @ 50mA,

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