Transistori - FET, MOSFET - Unicu

2N7639-GA

partiture parte: 318

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A,

2N7638-GA

partiture parte: 339

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A (Tc) (158°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A,

2N7637-GA

partiture parte: 369

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A,

2N7636-GA

partiture parte: 431

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7635-GA

partiture parte: 376

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7640-GA

partiture parte: 339

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 16A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A,

GA10SICP12-263

partiture parte: 1777

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A (Tc), Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A,

GA50JT06-258

partiture parte: 161

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT03-46

partiture parte: 1073

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 300V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A (Tc), Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A,

GA50JT12-247

partiture parte: 733

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT01-46

partiture parte: 1236

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A (Tc), Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A,

GA04JT17-247

partiture parte: 2389

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1700V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A (Tc) (95°C), Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A,

GA08JT17-247

partiture parte: 1402

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1700V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 250 mOhm @ 8A,

GA20JT12-263

partiture parte: 1840

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 45A (Tc), Rds On (Max) @ Id, Vgs: 60 mOhm @ 20A,

GA10JT12-263

partiture parte: 3360

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A (Tc), Rds On (Max) @ Id, Vgs: 120 mOhm @ 10A,

GA05JT12-263

partiture parte: 5916

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Tc),

GA50JT12-263

partiture parte: 816

GA100JT17-227

partiture parte: 253

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1700V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A,

GA100JT12-227

partiture parte: 460

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A,

GA20JT12-247

partiture parte: 2717

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Tc), Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A,

GA16JT17-247

partiture parte: 925

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1700V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 16A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 110 mOhm @ 16A,

GA10JT12-247

partiture parte: 3338

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A (Tc), Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A,

GA03JT12-247

partiture parte: 7277

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A (Tc) (95°C), Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A,

GA20SICP12-247

partiture parte: 1734

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 45A (Tc), Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A,

GA50JT17-247

partiture parte: 438

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1700V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT12-247

partiture parte: 10854

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A (Tc), Rds On (Max) @ Id, Vgs: 280 mOhm @ 5A,

GA06JT12-247

partiture parte: 6819

Tecnulugia: SiC (Silicon Carbide Junction Transistor), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A,