Diodi - Raddrizzatori di Ponte | Prudutti Discreti à Semiconduttore | 1

GHXS010A060S-D1

partiture parte: 2081

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 600V, Current - Mediu Rettificatu (Io): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 10A, Current - Inversione di Fuga @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS045A120S-D1

partiture parte: 537

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 1.2kV, Current - Mediu Rettificatu (Io): 45A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 45A, Current - Inversione di Fuga @ Vr: 300µA @ 1200V,

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Global Power Technologies Group

GHXS045A120S-D1E

partiture parte: 534

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 1.2kV, Current - Mediu Rettificatu (Io): 45A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 45A, Current - Inversione di Fuga @ Vr: 300µA @ 1200V,

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Global Power Technologies Group

GHXS015A120S-D1E

partiture parte: 1190

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 1.2kV, Current - Mediu Rettificatu (Io): 15A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 15A, Current - Inversione di Fuga @ Vr: 100µA @ 1200V,

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Global Power Technologies Group

GHXS015A120S-D1

partiture parte: 1154

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 1.2kV, Current - Mediu Rettificatu (Io): 15A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 15A, Current - Inversione di Fuga @ Vr: 100µA @ 1200V,

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Global Power Technologies Group

GHXS020A060S-D1

partiture parte: 1478

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 600V, Current - Mediu Rettificatu (Io): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 20A, Current - Inversione di Fuga @ Vr: 200µA @ 600V,

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Global Power Technologies Group

GHXS030A060S-D1

partiture parte: 1214

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 600V, Current - Mediu Rettificatu (Io): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 30A, Current - Inversione di Fuga @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS030A120S-D1

partiture parte: 658

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 1.2kV, Current - Mediu Rettificatu (Io): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 30A, Current - Inversione di Fuga @ Vr: 200µA @ 1200V,

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Global Power Technologies Group

GHXS030A120S-D1E

partiture parte: 720

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 1.2kV, Current - Mediu Rettificatu (Io): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 30A, Current - Inversione di Fuga @ Vr: 200µA @ 1200V,

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Global Power Technologies Group

GHXS020A060S-D1E

partiture parte: 1471

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 600V, Current - Mediu Rettificatu (Io): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 20A, Current - Inversione di Fuga @ Vr: 200µA @ 600V,

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Global Power Technologies Group

GHXS010A060S-D1E

partiture parte: 2062

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 600V, Current - Mediu Rettificatu (Io): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 10A, Current - Inversione di Fuga @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS030A060S-D1E

partiture parte: 1161

Tipu di Diode: Single Phase, Tecnulugia: Silicon Carbide Schottky, Tensione - Peak Reverse (Max): 600V, Current - Mediu Rettificatu (Io): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 30A, Current - Inversione di Fuga @ Vr: 100µA @ 600V,

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