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GSXD030A006S1-D3
Global Power Technologies Group

GSXD030A006S1-D3

partiture parte: 5311

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 750mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS050A060S-D4
Global Power Technologies Group

GHXS050A060S-D4

partiture parte: 1422

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 50A, Tensione - Avanti (Vf) (Max) @ Se: 1.8V @ 50A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS060A120S-D4
Global Power Technologies Group

GHXS060A120S-D4

partiture parte: 657

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 60A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 60A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF030A120S1-D3
Global Power Technologies Group

GSXF030A120S1-D3

partiture parte: 5408

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 2.35V @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A020S1-D3
Global Power Technologies Group

GSXF060A020S1-D3

partiture parte: 3794

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 60A, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 60A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS020A060S-D4
Global Power Technologies Group

GHXS020A060S-D4

partiture parte: 1996

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GP2D020A060U
Global Power Technologies Group

GP2D020A060U

partiture parte: 12784

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 30A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.65V @ 10A, Velocità: No Recovery Time > 500mA (Io),

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GSXD120A012S1-D3
Global Power Technologies Group

GSXD120A012S1-D3

partiture parte: 4555

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 120V, Current - Mediu Rettificatu (Io) (per Diode): 120A, Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 120A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS030A120S-D4
Global Power Technologies Group

GHXS030A120S-D4

partiture parte: 1197

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 30A, Velocità: No Recovery Time > 500mA (Io),

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GHXS015A120S-D3
Global Power Technologies Group

GHXS015A120S-D3

partiture parte: 1918

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS030A060S-D3
Global Power Technologies Group

GHXS030A060S-D3

partiture parte: 1932

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 3A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS045A120S-D3
Global Power Technologies Group

GHXS045A120S-D3

partiture parte: 907

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 45A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 45A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A060S1-D3
Global Power Technologies Group

GSXF060A060S1-D3

partiture parte: 5768

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 60A, Tensione - Avanti (Vf) (Max) @ Se: 1.5V @ 60A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS010A060S-D3
Global Power Technologies Group

GHXS010A060S-D3

partiture parte: 3747

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF030A040S1-D3
Global Power Technologies Group

GSXF030A040S1-D3

partiture parte: 6069

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.3V @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GP2D024A060U
Global Power Technologies Group

GP2D024A060U

partiture parte: 21283

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 36A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.65V @ 12A, Velocità: No Recovery Time > 500mA (Io),

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GHXS045A120S-D4
Global Power Technologies Group

GHXS045A120S-D4

partiture parte: 845

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 45A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 45A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF030A060S1-D3
Global Power Technologies Group

GSXF030A060S1-D3

partiture parte: 5945

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.5V @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS010A060S-D4
Global Power Technologies Group

GHXS010A060S-D4

partiture parte: 3727

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GP2D016A120U
Global Power Technologies Group

GP2D016A120U

partiture parte: 17930

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 24A (DC), Tensione - Avanti (Vf) (Max) @ Se: 1.8V @ 8A, Velocità: No Recovery Time > 500mA (Io),

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GSXF120A060S1-D3
Global Power Technologies Group

GSXF120A060S1-D3

partiture parte: 3644

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 120A, Tensione - Avanti (Vf) (Max) @ Se: 1.5V @ 120A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS030A060S-D4
Global Power Technologies Group

GHXS030A060S-D4

partiture parte: 1867

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD030A008S1-D3
Global Power Technologies Group

GSXD030A008S1-D3

partiture parte: 5284

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS060A120S-D3
Global Power Technologies Group

GHXS060A120S-D3

partiture parte: 732

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 60A, Tensione - Avanti (Vf) (Max) @ Se: 1.7V @ 60A, Velocità: No Recovery Time > 500mA (Io),

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GHXS050A060S-D3
Global Power Technologies Group

GHXS050A060S-D3

partiture parte: 1404

Configurazione Diode: 2 Independent, Tipu di Diode: Silicon Carbide Schottky, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 50A, Tensione - Avanti (Vf) (Max) @ Se: 1.8V @ 50A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD030A004S1-D3
Global Power Technologies Group

GSXD030A004S1-D3

partiture parte: 5375

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD120A015S1-D3
Global Power Technologies Group

GSXD120A015S1-D3

partiture parte: 3628

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 120A, Tensione - Avanti (Vf) (Max) @ Se: 880mV @ 120A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF100A020S1-D3
Global Power Technologies Group

GSXF100A020S1-D3

partiture parte: 3464

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 120A, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF100A120S1-D3
Global Power Technologies Group

GSXF100A120S1-D3

partiture parte: 3311

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 1200V, Current - Mediu Rettificatu (Io) (per Diode): 100A, Tensione - Avanti (Vf) (Max) @ Se: 2.35V @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD120A008S1-D3
Global Power Technologies Group

GSXD120A008S1-D3

partiture parte: 3421

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 120A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 120A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A040S1-D3
Global Power Technologies Group

GSXF060A040S1-D3

partiture parte: 4597

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 60A, Tensione - Avanti (Vf) (Max) @ Se: 1.3V @ 60A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD100A006S1-D3
Global Power Technologies Group

GSXD100A006S1-D3

partiture parte: 3452

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 100A, Tensione - Avanti (Vf) (Max) @ Se: 750mV @ 100A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD120A010S1-D3
Global Power Technologies Group

GSXD120A010S1-D3

partiture parte: 3711

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 120A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 120A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD050A008S1-D3
Global Power Technologies Group

GSXD050A008S1-D3

partiture parte: 4339

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 50A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 50A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A100S1-D3
Global Power Technologies Group

GSXF060A100S1-D3

partiture parte: 4206

Configurazione Diode: 2 Independent, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 1000V, Current - Mediu Rettificatu (Io) (per Diode): 60A, Tensione - Avanti (Vf) (Max) @ Se: 2.35V @ 60A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD080A008S1-D3
Global Power Technologies Group

GSXD080A008S1-D3

partiture parte: 3852

Configurazione Diode: 2 Independent, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 80A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 80A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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