Transistori - FET, MOSFET - Unicu

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Transistori - FET, MOSFET - Unicu

VN2460N3-G-P014

Microchip Technology

VN2460N3-G-P014

partiture parte: 77581

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V,

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DN2535N3-G-P003

Microchip Technology

DN2535N3-G-P003

partiture parte: 124618

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 350V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 120mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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Microchip Technology

TP2104K1-G

partiture parte: 151643

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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VN0106N3-G-P003

Microchip Technology

VN0106N3-G-P003

partiture parte: 134159

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 350mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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TN0110N3-G-P002

Microchip Technology

TN0110N3-G-P002

partiture parte: 96862

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 350mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

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VN2222LL-G-P003

Microchip Technology

VN2222LL-G-P003

partiture parte: 193763

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 230mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 500mA, 10V,

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Microchip Technology

TP0610T-G

partiture parte: 134146

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 120mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 10V,

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Microchip Technology

MCP87130T-U/LC

partiture parte: 197723

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 43A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 3.3V, 10V, Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V,

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Microchip Technology

VP3203N8-G

partiture parte: 62298

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.1A (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.5A, 10V,

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Microchip Technology

MCP87018T-U/MF

partiture parte: 63090

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 3.3V, 10V, Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V,

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Microchip Technology

MIC94053YC6-TR

partiture parte: 128534

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 6V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V,

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TN0106N3-G-P013

Microchip Technology

TN0106N3-G-P013

partiture parte: 112567

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 350mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

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Microchip Technology

DN1509K1-G

partiture parte: 160789

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 90V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 200mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V,

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Microchip Technology

MIC94030YM4-TR

partiture parte: 142413

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 16V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.7V, 10V, Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V,

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Microchip Technology

VN2460N8-G

partiture parte: 81138

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 200mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V,

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VN0550N3-G-P013

Microchip Technology

VN0550N3-G-P013

partiture parte: 63426

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 50mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V,

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VN2222LL-G-P013

Microchip Technology

VN2222LL-G-P013

partiture parte: 193747

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 230mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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Microchip Technology

MCP87130T-U/MF

partiture parte: 121994

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 43A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 3.3V, 10V, Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V,

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Microchip Technology

DN3765K4-G

partiture parte: 37252

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 300mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 0V,

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Microchip Technology

VN0606L-G-P003

partiture parte: 77502

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 330mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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DN2540N3-G-P003

Microchip Technology

DN2540N3-G-P003

partiture parte: 118644

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 120mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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Microchip Technology

DN2450N8-G

partiture parte: 136754

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 230mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 300mA, 0V,

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Microchip Technology

TP2640LG-G

partiture parte: 49827

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 86mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V,

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VN3205N3-G-P002

Microchip Technology

VN3205N3-G-P002

partiture parte: 69774

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 50V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.2A (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V,

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TP2104N3-G-P003

Microchip Technology

TP2104N3-G-P003

partiture parte: 139528

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 175mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

DN3525N8-G

partiture parte: 138382

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 250V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 360mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V,

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Microchip Technology

VN2410L-G-P013

partiture parte: 96918

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 240V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 190mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V,

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Microchip Technology

TN2510N8-G

partiture parte: 91780

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 730mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V,

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Microchip Technology

TN2501N8-G

partiture parte: 81098

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 18V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 400mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.2V, 3V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 200mA, 3V,

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Microchip Technology

MIC94050YM4-TR

partiture parte: 157804

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 6V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.8A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V,

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Microchip Technology

VN10KN3-G-P002

partiture parte: 174354

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 310mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Microchip Technology

LP0701LG-G

partiture parte: 51372

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 16.5V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 700mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 2V, 5V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 300mA, 5V,

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TN0104N3-G-P003

Microchip Technology

TN0104N3-G-P003

partiture parte: 96865

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 450mA (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V,

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Microchip Technology

VN10KN3-G-P013

partiture parte: 174393

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 310mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Microchip Technology

TN2435N8-G

partiture parte: 74270

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 350V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 365mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 750mA, 10V,

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Microchip Technology

DN3145N8-G

partiture parte: 136772

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 450V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 60 Ohm @ 100mA, 0V,

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