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Transistori - FET, MOSFET - Unicu

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  • Transistori - FET, MOSFET - Unicu
TP2540N3-G-P002
Microchip Technology

TP2540N3-G-P002

partiture parte: 65888

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 86mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V,

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VN10KN3-G-P003
Microchip Technology

VN10KN3-G-P003

partiture parte: 174415

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 310mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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LND150N3-G-P002
Microchip Technology

LND150N3-G-P002

partiture parte: 183557

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V,

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TN0604N3-G-P005
Microchip Technology

TN0604N3-G-P005

partiture parte: 87196

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 700mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V,

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MCP87055T-U/LC
Microchip Technology

MCP87055T-U/LC

partiture parte: 166136

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V,

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TN0620N3-G-P014
Microchip Technology

TN0620N3-G-P014

partiture parte: 71164

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 250mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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VN2410L-G-P014
Microchip Technology

VN2410L-G-P014

partiture parte: 96918

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 240V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 190mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V,

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TN2124K1-G
Microchip Technology

TN2124K1-G

partiture parte: 145383

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 240V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 134mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 3V, 4.5V, Rds On (Max) @ Id, Vgs: 15 Ohm @ 120mA, 4.5V,

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VP2450N8-G
Microchip Technology

VP2450N8-G

partiture parte: 58167

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 10V,

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TP2522N8-G
Microchip Technology

TP2522N8-G

partiture parte: 71202

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 220V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 260mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V,

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TN5335K1-G
Microchip Technology

TN5335K1-G

partiture parte: 124592

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 350V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 110mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 15 Ohm @ 200mA, 10V,

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TP5322N8-G
Microchip Technology

TP5322N8-G

partiture parte: 145311

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 220V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 260mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V,

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DN3535N8-G
Microchip Technology

DN3535N8-G

partiture parte: 136838

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 350V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 230mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 0V,

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TP0606N3-G-P002
Microchip Technology

TP0606N3-G-P002

partiture parte: 102565

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 320mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V,

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TN5325N8-G
Microchip Technology

TN5325N8-G

partiture parte: 158539

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 250V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 316mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V,

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TN5325N3-G-P002
Microchip Technology

TN5325N3-G-P002

partiture parte: 145391

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 250V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 215mA (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V,

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TP0606N3-G-P003
Microchip Technology

TP0606N3-G-P003

partiture parte: 102649

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 320mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V,

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TP2510N8-G
Microchip Technology

TP2510N8-G

partiture parte: 81155

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 480mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V,

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TN0106N3-G
Microchip Technology

TN0106N3-G

partiture parte: 93893

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 350mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

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TP0604N3-G
Microchip Technology

TP0604N3-G

partiture parte: 57712

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 430mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V,

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VN3205N3-G
Microchip Technology

VN3205N3-G

partiture parte: 56360

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 50V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.2A (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V,

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VN4012L-G
Microchip Technology

VN4012L-G

partiture parte: 47260

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 100mA, 4.5V,

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VP2206N2
Microchip Technology

VP2206N2

partiture parte: 5360

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 750mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V,

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TP2540N3-G
Microchip Technology

TP2540N3-G

partiture parte: 52692

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 86mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V,

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DN3545N3-G
Microchip Technology

DN3545N3-G

partiture parte: 104685

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 450V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 136mA, Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V,

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TP2640N3-G
Microchip Technology

TP2640N3-G

partiture parte: 45489

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 180mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V,

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TN0610N3-G
Microchip Technology

TN0610N3-G

partiture parte: 73267

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 500mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V,

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TP0620N3-G
Microchip Technology

TP0620N3-G

partiture parte: 52772

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 175mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V,

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VN2450N3-G
Microchip Technology

VN2450N3-G

partiture parte: 64862

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 200mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 400mA, 10V,

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TP2635N3-G
Microchip Technology

TP2635N3-G

partiture parte: 47311

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 350V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 180mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V,

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VN0606L-G
Microchip Technology

VN0606L-G

partiture parte: 62684

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 330mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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VN2460N3-G
Microchip Technology

VN2460N3-G

partiture parte: 62683

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 160mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V,

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VN0808L-G
Microchip Technology

VN0808L-G

partiture parte: 62599

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 80V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 300mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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TN0606N3-G
Microchip Technology

TN0606N3-G

partiture parte: 93941

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 500mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V,

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VP2450N3-G
Microchip Technology

VP2450N3-G

partiture parte: 46076

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 10V,

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DN2540N5-G
Microchip Technology

DN2540N5-G

partiture parte: 53451

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 500mA (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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