Transistori - FET, MOSFET - Matrici | Prudutti Discreti à Semiconduttore | 7

APTM20DUM05G

partiture parte: 536

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 317A, Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100H35FTG

partiture parte: 731

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM35FTG

partiture parte: 766

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50HM65FTG

partiture parte: 767

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100TA35FPG

partiture parte: 533

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60HM70T1G

partiture parte: 1743

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTM50HM35FG

partiture parte: 448

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM60A11FT1G

partiture parte: 2026

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A, Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60DHM24T3G

partiture parte: 1204

Tipu FET: 2 N-Channel (Dual) Asymmetrical, Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTC60AM24SCTG

partiture parte: 712

Tipu FET: 2 N Channel (Phase Leg), Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTMC120HM17CT3AG

partiture parte: 306

Tipu FET: 4 N-Channel, Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 147A (Tc), Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 4V @ 30mA,

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Microsemi Corporation

APTM50DDA10T3G

partiture parte: 1671

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 37A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50HM38FG

partiture parte: 461

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM120A15FG

partiture parte: 396

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A, Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTC80TDU15PG

partiture parte: 936

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTM50AM17FG

partiture parte: 423

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 180A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM10DUM02G

partiture parte: 488

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 495A, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

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Microsemi Corporation

APTMC170AM60CT1AG

partiture parte: 196

Tipu FET: 2 N Channel (Phase Leg), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1700V (1.7kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 50A (Tc), Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2.5mA (Typ),

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Microsemi Corporation

APTC60VDAM45T1G

partiture parte: 1797

Tipu FET: 2 N-Channel (Dual), Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTM120H29FG

partiture parte: 261

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 34A, Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM10HM05FG

partiture parte: 446

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 278A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

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Microsemi Corporation

APTM50H15FT1G

partiture parte: 2107

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 25A, Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTMC170AM30CT1AG

partiture parte: 139

Tipu FET: 2 N Channel (Phase Leg), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1700V (1.7kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 5mA (Typ),

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Microsemi Corporation

APTM08TAM04PG

partiture parte: 1065

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 75V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 120A, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM20HM08FG

partiture parte: 381

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 208A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20AM05FG

partiture parte: 433

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 317A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM10HM09FT3G

partiture parte: 940

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10HM19FT3G

partiture parte: 1470

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 70A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTC60HM83FT2G

partiture parte: 1719

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 36A, Rds On (Max) @ Id, Vgs: 83 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 3mA,

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Microsemi Corporation

APTC80H15T1G

partiture parte: 1728

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTM50AM38SCTG

partiture parte: 599

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20HM10FG

partiture parte: 489

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 175A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTC60HM45SCTG

partiture parte: 743

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTC80H15T3G

partiture parte: 1759

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTC60HM35T3G

partiture parte: 248

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTM50TAM65FPG

partiture parte: 545

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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