Transistori - FET, MOSFET - Matrici

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Transistori - FET, MOSFET - Matrici

Microsemi Corporation

APTM100DU18TG

partiture parte: 2809

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 43A, Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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APTM100DDA35T3G

Microsemi Corporation

APTM100DDA35T3G

partiture parte: 2731

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A46FT1G

partiture parte: 2813

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 19A, Rds On (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A40FT1G

partiture parte: 2805

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 21A, Rds On (Max) @ Id, Vgs: 480 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A12STG

partiture parte: 2822

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 68A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100A23SCTG

partiture parte: 2760

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 36A, Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM08TDUM04PG

partiture parte: 2746

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 75V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 120A, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTC80H29T1G

partiture parte: 2742

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A, Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80DSK29T3G

partiture parte: 2793

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A, Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80H29SCTG

partiture parte: 1092

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A, Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80DDA29T3G

partiture parte: 2788

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A, Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80A15T1G

partiture parte: 2799

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTC80AM75SCG

partiture parte: 594

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 56A, Rds On (Max) @ Id, Vgs: 75 mOhm @ 28A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 4mA,

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Microsemi Corporation

APTC80A10SCTG

partiture parte: 863

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 42A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

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APTC60DSKM70T3G

Microsemi Corporation

APTC60DSKM70T3G

partiture parte: 2751

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

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APTC60DSKM35T3G

Microsemi Corporation

APTC60DSKM35T3G

partiture parte: 2727

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

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APTC60DDAM70T3G

Microsemi Corporation

APTC60DDAM70T3G

partiture parte: 2741

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60AM70T1G

partiture parte: 2769

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

JANTXV2N7334

partiture parte: 2993

Tipu FET: 4 N-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1A, Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

JANTX2N7335

partiture parte: 2875

Tipu FET: 4 P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 750mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

JAN2N7335

partiture parte: 2942

Tipu FET: 4 P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 750mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

JAN2N7334

partiture parte: 2865

Tipu FET: 4 N-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1A, Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

JANTXV2N7335

partiture parte: 2903

Tipu FET: 4 P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 750mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

JANTX2N7334

partiture parte: 2911

Tipu FET: 4 N-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1A, Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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