Transistori - FET, MOSFET - Matrici | Prudutti Discreti à Semiconduttore | 7

2N7335

partiture parte: 2928

Tipu FET: 4 P-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 750mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

2N7334

partiture parte: 2895

Tipu FET: 4 N-Channel, Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1A, Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

APTC60DSKM24T3G

partiture parte: 765

Tipu FET: 2 N Channel (Dual Buck Chopper), Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM100H45STG

partiture parte: 605

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 18A, Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTMC120TAM33CTPAG

partiture parte: 107

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 78A (Tc), Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 3mA (Typ),

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Microsemi Corporation

APTM50H14FT3G

partiture parte: 1149

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 26A, Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTMC120AM25CT3AG

partiture parte: 283

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 113A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 4mA (Typ),

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Microsemi Corporation

APTSM120AM08CT6AG

partiture parte: 144

Tipu FET: 2 N-Channel (Dual), Schottky, Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 370A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 3V @ 10mA,

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Microsemi Corporation

APTSM120TAM33CTPAG

partiture parte: 177

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 112A (Tc), Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Max) @ Id: 3V @ 3mA,

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Microsemi Corporation

APTSM120AM09CD3AG

partiture parte: 195

Tipu FET: 2 N-Channel (Dual), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 337A (Tc), Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Max) @ Id: 3V @ 9mA,

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Microsemi Corporation

APTSM120AM14CD3AG

partiture parte: 248

Tipu FET: 2 N-Channel (Dual), Schottky, Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 337A (Tc), Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Max) @ Id: 3V @ 9mA,

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Microsemi Corporation

APTSM120AM55CT1AG

partiture parte: 589

Tipu FET: 2 N-Channel (Dual), Schottky, Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 74A (Tc), Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 3V @ 2mA,

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Microsemi Corporation

APTSM120AM25CT3AG

partiture parte: 290

Tipu FET: 2 N-Channel (Dual), Schottky, Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 148A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Max) @ Id: 3V @ 4mA,

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Microsemi Corporation

APTMC120AM08CD3AG

partiture parte: 68

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 250A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 10mA (Typ),

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Microsemi Corporation

APTM50HM65FT3G

partiture parte: 692

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM38STG

partiture parte: 559

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM100H45SCTG

partiture parte: 480

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 18A, Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A13SCG

partiture parte: 292

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 65A, Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTM50AM24SCG

partiture parte: 372

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 150A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTM120H140FT1G

partiture parte: 1785

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 1.68 Ohm @ 7A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50H10FT3G

partiture parte: 1187

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 37A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM100A13DG

partiture parte: 505

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 65A, Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTC60VDAM24T3G

partiture parte: 1155

Tipu FET: 2 N-Channel (Dual), Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM100H45FT3G

partiture parte: 858

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 18A, Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A18FTG

partiture parte: 728

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1000V (1kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 43A, Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTMC120TAM12CTPAG

partiture parte: 63

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Silicon Carbide (SiC), Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 220A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 30mA (Typ),

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Microsemi Corporation

APTM20HM20FTG

partiture parte: 799

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 89A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60HM70T3G

partiture parte: 1635

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60AM35SCTG

partiture parte: 860

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 36A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTC80DDA15T3G

partiture parte: 1954

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTM50HM75FT3G

partiture parte: 880

Tipu FET: 4 N-Channel (H-Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 46A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60AM242G

partiture parte: 951

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM50AM19FG

partiture parte: 440

Tipu FET: 2 N-Channel (Half Bridge), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 163A, Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM120DU15G

partiture parte: 383

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 1200V (1.2kV), Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A, Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTC60DDAM35T3G

partiture parte: 1490

Tipu FET: 2 N-Channel (Dual), Funzione FET: Standard, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTC60TAM24TPG

partiture parte: 401

Tipu FET: 6 N-Channel (3-Phase Bridge), Funzione FET: Super Junction, Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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