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Transistori - FET, MOSFET - Unicu

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  • Transistori - FET, MOSFET - Unicu
FQA7N80_F109
ON Semiconductor

FQA7N80_F109

partiture parte: 612

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.2A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.6A, 10V,

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FDBL0210N80
ON Semiconductor

FDBL0210N80

partiture parte: 24057

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 80V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 240A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V,

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FDU6676AS
ON Semiconductor

FDU6676AS

partiture parte: 636

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 90A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 16A, 10V,

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NTD4863NA-1G
ON Semiconductor

NTD4863NA-1G

partiture parte: 661

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9.2A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V,

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IRF740B
ON Semiconductor

IRF740B

partiture parte: 702

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 540 mOhm @ 5A, 10V,

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IRFM210BTF_FP001
ON Semiconductor

IRFM210BTF_FP001

partiture parte: 774

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 770mA (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 390mA, 10V,

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FQD19N10TM_F080
ON Semiconductor

FQD19N10TM_F080

partiture parte: 733

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15.6A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V,

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NTR4501NT1
ON Semiconductor

NTR4501NT1

partiture parte: 893

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.2A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V,

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FQA7N90M_F109
ON Semiconductor

FQA7N90M_F109

partiture parte: 568

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 900V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 3.5A, 10V,

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NTHS2101PT1G
ON Semiconductor

NTHS2101PT1G

partiture parte: 851

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 8V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.4A (Tj), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V,

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FDP040N06
ON Semiconductor

FDP040N06

partiture parte: 859

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 120A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V,

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FQD8P10TM_SB82052
ON Semiconductor

FQD8P10TM_SB82052

partiture parte: 585

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.6A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V,

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FDMS8848NZ
ON Semiconductor

FDMS8848NZ

partiture parte: 650

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 22.8A (Ta), 49A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 22.8A, 10V,

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FQA7N90_F109
ON Semiconductor

FQA7N90_F109

partiture parte: 650

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 900V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.4A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 3.7A, 10V,

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FDC645N_F095
ON Semiconductor

FDC645N_F095

partiture parte: 655

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.5A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.2A, 10V,

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FQP19N20C_F080
ON Semiconductor

FQP19N20C_F080

partiture parte: 670

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 19A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.5A, 10V,

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FDT86246
ON Semiconductor

FDT86246

partiture parte: 158528

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 236 mOhm @ 2A, 10V,

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FQPF3N90_NL
ON Semiconductor

FQPF3N90_NL

partiture parte: 717

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 900V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.1A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.05A, 10V,

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FDP8876
ON Semiconductor

FDP8876

partiture parte: 583

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 70A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 40A, 10V,

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NTMFS4846NT3G
ON Semiconductor

NTMFS4846NT3G

partiture parte: 595

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12.7A (Ta), 100A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V,

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FDD6770A
ON Semiconductor

FDD6770A

partiture parte: 706

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 24A (Ta), 50A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 24A, 10V,

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NTD5805NT4G
ON Semiconductor

NTD5805NT4G

partiture parte: 792

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 51A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V,

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NTMFS4847NT1G
ON Semiconductor

NTMFS4847NT1G

partiture parte: 670

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11.5A (Ta), 85A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V,

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FCA16N60_F109
ON Semiconductor

FCA16N60_F109

partiture parte: 643

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 16A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 260 mOhm @ 8A, 10V,

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IRF630BTSTU_FP001
ON Semiconductor

IRF630BTSTU_FP001

partiture parte: 748

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V,

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IRFR130ATM
ON Semiconductor

IRFR130ATM

partiture parte: 719

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 13A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 6.5A, 10V,

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NTHD2110TT1G
ON Semiconductor

NTHD2110TT1G

partiture parte: 614

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 12V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V,

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NTLJS1102PTAG
ON Semiconductor

NTLJS1102PTAG

partiture parte: 686

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 8V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.7A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.2A, 4.5V,

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FQD6N60CTM
ON Semiconductor

FQD6N60CTM

partiture parte: 5668

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V,

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IRFU120ATU
ON Semiconductor

IRFU120ATU

partiture parte: 718

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.4A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V,

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FQA5N90_F109
ON Semiconductor

FQA5N90_F109

partiture parte: 661

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 900V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.8A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2.9A, 10V,

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FDPF7N50F
ON Semiconductor

FDPF7N50F

partiture parte: 615

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V,

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SFP9Z24
ON Semiconductor

SFP9Z24

partiture parte: 719

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9.7A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.9A, 10V,

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FQPF13N50CT
ON Semiconductor

FQPF13N50CT

partiture parte: 587

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 13A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V,

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NTF6P02T3G
ON Semiconductor

NTF6P02T3G

partiture parte: 190215

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V,

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NTF3055L175T1G
ON Semiconductor

NTF3055L175T1G

partiture parte: 650

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 175 mOhm @ 1A, 5V,

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