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Transistori - FET, MOSFET - Unicu

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  • Transistori - FET, MOSFET - Unicu
NTTFS4824NTWG
ON Semiconductor

NTTFS4824NTWG

partiture parte: 716

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.3A (Ta), 69A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V,

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FDS6688AS
ON Semiconductor

FDS6688AS

partiture parte: 613

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 14.5A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 14.5A, 10V,

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FDD6778A
ON Semiconductor

FDD6778A

partiture parte: 638

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12A (Ta), 10A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V,

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NTB5412NT4G
ON Semiconductor

NTB5412NT4G

partiture parte: 6085

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V,

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MMDF3N02HDR2G
ON Semiconductor

MMDF3N02HDR2G

partiture parte: 838

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.8A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V,

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FDD7030BL
ON Semiconductor

FDD7030BL

partiture parte: 617

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 14A (Ta), 56A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 14A, 10V,

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FQD4N50TM_WS
ON Semiconductor

FQD4N50TM_WS

partiture parte: 570

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.6A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.3A, 10V,

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FDI025N06
ON Semiconductor

FDI025N06

partiture parte: 624

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 265A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 75A, 10V,

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MTB30P06VT4G
ON Semiconductor

MTB30P06VT4G

partiture parte: 600

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V,

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FDP8870-F085
ON Semiconductor

FDP8870-F085

partiture parte: 581

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 19A (Ta), 156A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V,

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NTD70N03RT4G
ON Semiconductor

NTD70N03RT4G

partiture parte: 892

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A (Ta), 32A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V,

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NTB75N06T4G
ON Semiconductor

NTB75N06T4G

partiture parte: 839

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 75A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 37.5A, 10V,

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SCH2825-TL-E
ON Semiconductor

SCH2825-TL-E

partiture parte: 150222

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.6A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 800mA, 10V,

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FDT55AN06LA0
ON Semiconductor

FDT55AN06LA0

partiture parte: 579

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12.1A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 46 mOhm @ 11A, 10V,

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NILMS4501NR2G
ON Semiconductor

NILMS4501NR2G

partiture parte: 848

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 24V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9.5A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 6A, 10V,

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FQD5N60CTM_F080
ON Semiconductor

FQD5N60CTM_F080

partiture parte: 647

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.8A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V,

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IRFR120ATM
ON Semiconductor

IRFR120ATM

partiture parte: 712

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.4A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V,

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FD70N20PWD
ON Semiconductor

FD70N20PWD

partiture parte: 612

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 70A (Ta),

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FQD2N60CTF_F080
ON Semiconductor

FQD2N60CTF_F080

partiture parte: 714

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.9A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 950mA, 10V,

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SSH70N10A
ON Semiconductor

SSH70N10A

partiture parte: 739

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 70A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 35A, 10V,

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SSP45N20B_FP001
ON Semiconductor

SSP45N20B_FP001

partiture parte: 789

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 35A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.5A, 10V,

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FQU6N40CTU_NBEA001
ON Semiconductor

FQU6N40CTU_NBEA001

partiture parte: 624

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.25A, 10V,

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FDD16AN08A0_NF054
ON Semiconductor

FDD16AN08A0_NF054

partiture parte: 623

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 75V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A (Ta), 50A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V,

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NTD4804NAT4G
ON Semiconductor

NTD4804NAT4G

partiture parte: 586

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 14.5A (Ta), 124A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V,

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FQA6N80_F109
ON Semiconductor

FQA6N80_F109

partiture parte: 664

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 800V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.3A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 3.15A, 10V,

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FDP15N65
ON Semiconductor

FDP15N65

partiture parte: 6152

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 440 mOhm @ 7.5A, 10V,

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NTK3043NAT5G
ON Semiconductor

NTK3043NAT5G

partiture parte: 635

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 210mA (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.65V, 4.5V, Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 10mA, 4.5V,

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MTP20N15EG
ON Semiconductor

MTP20N15EG

partiture parte: 725

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 150V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V,

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NTD12N10T4G
ON Semiconductor

NTD12N10T4G

partiture parte: 895

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 12A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V,

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NTD5414NT4G
ON Semiconductor

NTD5414NT4G

partiture parte: 670

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 24A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 37 mOhm @ 24A, 10V,

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FQD2P40TF_F080
ON Semiconductor

FQD2P40TF_F080

partiture parte: 681

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.56A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 780mA, 10V,

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NTLJS3180PZTAG
ON Semiconductor

NTLJS3180PZTAG

partiture parte: 643

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.5A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4.5V,

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NTD4810NT4G
ON Semiconductor

NTD4810NT4G

partiture parte: 850

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A (Ta), 54A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V,

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NTMFS4845NT3G
ON Semiconductor

NTMFS4845NT3G

partiture parte: 598

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 13.7A (Ta), 115A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V,

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NTHS5441PT1G
ON Semiconductor

NTHS5441PT1G

partiture parte: 626

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V,

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SFH9240
ON Semiconductor

SFH9240

partiture parte: 630

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V,

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