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Transistori - FET, MOSFET - Unicu

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  • Transistori - FET, MOSFET - Unicu
NTD5807NT4G
ON Semiconductor

NTD5807NT4G

partiture parte: 6157

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 23A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V,

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FQP11N50CF
ON Semiconductor

FQP11N50CF

partiture parte: 636

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 550 mOhm @ 5.5A, 10V,

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IRFR210BTM_FP001
ON Semiconductor

IRFR210BTM_FP001

partiture parte: 701

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.7A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.35A, 10V,

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NTMFS4744NT1G
ON Semiconductor

NTMFS4744NT1G

partiture parte: 820

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 30A, 10V,

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NTMS4107NR2G
ON Semiconductor

NTMS4107NR2G

partiture parte: 881

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 11A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V,

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FDH633605
ON Semiconductor

FDH633605

partiture parte: 666

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide),

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NTD4865N-35G
ON Semiconductor

NTD4865N-35G

partiture parte: 641

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.5A (Ta), 44A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10.9 mOhm @ 30A, 10V,

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FQPF9N50CYDTU
ON Semiconductor

FQPF9N50CYDTU

partiture parte: 667

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V,

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NDS331N_D87Z
ON Semiconductor

NDS331N_D87Z

partiture parte: 660

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 1.3A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.7V, 4.5V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 4.5V,

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FDC640P_F095
ON Semiconductor

FDC640P_F095

partiture parte: 572

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.5A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.5A, 4.5V,

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NTLJD3182FZTBG
ON Semiconductor

NTLJD3182FZTBG

partiture parte: 694

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.2A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V,

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NTB52N10T4G
ON Semiconductor

NTB52N10T4G

partiture parte: 644

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 52A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 26A, 10V,

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SFP9540
ON Semiconductor

SFP9540

partiture parte: 765

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 17A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.5A, 10V,

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IRFR220BTM_FP001
ON Semiconductor

IRFR220BTM_FP001

partiture parte: 693

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.6A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V,

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NTMS5P02R2SG
ON Semiconductor

NTMS5P02R2SG

partiture parte: 885

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.95A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.4A, 4.5V,

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IRFU220BTU_FP001
ON Semiconductor

IRFU220BTU_FP001

partiture parte: 698

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.6A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V,

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FDD45AN06LA0_F085
ON Semiconductor

FDD45AN06LA0_F085

partiture parte: 643

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.2A (Ta), 25A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 36 mOhm @ 25A, 10V,

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FQB22P10TM-F085
ON Semiconductor

FQB22P10TM-F085

partiture parte: 716

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 22A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V,

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FDC5614P_D87Z
ON Semiconductor

FDC5614P_D87Z

partiture parte: 715

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 3A, 10V,

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SFU9220TU_F080
ON Semiconductor

SFU9220TU_F080

partiture parte: 785

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.1A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V,

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FQPF11N40T
ON Semiconductor

FQPF11N40T

partiture parte: 607

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 400V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.6A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 480 mOhm @ 3.3A, 10V,

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FQU7P20TU_AM002
ON Semiconductor

FQU7P20TU_AM002

partiture parte: 665

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.7A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.85A, 10V,

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FQU10N20TU_AM002
ON Semiconductor

FQU10N20TU_AM002

partiture parte: 713

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.6A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V,

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FDJ129P_F077
ON Semiconductor

FDJ129P_F077

partiture parte: 627

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 4.2A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.2A, 4.5V,

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FDT458P
ON Semiconductor

FDT458P

partiture parte: 196658

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.4A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V,

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NTMFS4851NT3G
ON Semiconductor

NTMFS4851NT3G

partiture parte: 599

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9.5A (Ta), 66A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V,

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SFR9024TM
ON Semiconductor

SFR9024TM

partiture parte: 780

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.8A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 280 mOhm @ 3.9A, 10V,

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FDC697P
ON Semiconductor

FDC697P

partiture parte: 569

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 4.5V,

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SFR9014TF
ON Semiconductor

SFR9014TF

partiture parte: 6073

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.3A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.7A, 10V,

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IRFU214BTU_FP001
ON Semiconductor

IRFU214BTU_FP001

partiture parte: 722

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 250V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.2A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.1A, 10V,

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FDS9412A
ON Semiconductor

FDS9412A

partiture parte: 601

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V,

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NTD60N02RT4G
ON Semiconductor

NTD60N02RT4G

partiture parte: 862

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 25V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8.5A (Ta), 32A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V,

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NTB18N06LT4G
ON Semiconductor

NTB18N06LT4G

partiture parte: 630

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V,

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NTD4815NHT4G
ON Semiconductor

NTD4815NHT4G

partiture parte: 853

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6.9A (Ta), 35A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V,

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FQD3N50CTM
ON Semiconductor

FQD3N50CTM

partiture parte: 659

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2.5A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.25A, 10V,

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FCD4N60TM_WS
ON Semiconductor

FCD4N60TM_WS

partiture parte: 612

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 600V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 3.9A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V,

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