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MBRF2535CTHC0G
Taiwan Semiconductor Corporation

MBRF2535CTHC0G

partiture parte: 135

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 820mV @ 12.5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR10150 C0G
Taiwan Semiconductor Corporation

SR10150 C0G

partiture parte: 104

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GP1001 C0G
Taiwan Semiconductor Corporation

GP1001 C0G

partiture parte: 148

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.1V @ 5A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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MBRF15100CT C0G
Taiwan Semiconductor Corporation

MBRF15100CT C0G

partiture parte: 109

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 7.5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR1640PTHC0G
Taiwan Semiconductor Corporation

SR1640PTHC0G

partiture parte: 95

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2035PT C0G
Taiwan Semiconductor Corporation

MBR2035PT C0G

partiture parte: 85

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR3045CTHC0G
Taiwan Semiconductor Corporation

MBR3045CTHC0G

partiture parte: 83

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 820mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR30L120CTHC0G
Taiwan Semiconductor Corporation

MBR30L120CTHC0G

partiture parte: 143

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 120V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MUR1620CT C0G
Taiwan Semiconductor Corporation

MUR1620CT C0G

partiture parte: 126

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 975mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR3050CT C0G
Taiwan Semiconductor Corporation

MBR3050CT C0G

partiture parte: 94

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 770mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR20100PT C0G
Taiwan Semiconductor Corporation

MBR20100PT C0G

partiture parte: 129

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS2560CT MNG
Taiwan Semiconductor Corporation

MBRS2560CT MNG

partiture parte: 95

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 25A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF25150CT C0G
Taiwan Semiconductor Corporation

MBRF25150CT C0G

partiture parte: 74

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 1.02V @ 25A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR30150CTHC0G
Taiwan Semiconductor Corporation

MBR30150CTHC0G

partiture parte: 115

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.02V @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR16150 C0G
Taiwan Semiconductor Corporation

SR16150 C0G

partiture parte: 94

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 1.05V @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRS2060 MNG
Taiwan Semiconductor Corporation

SRS2060 MNG

partiture parte: 112

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRF20150HC0G
Taiwan Semiconductor Corporation

SRF20150HC0G

partiture parte: 142

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1.02V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR30200PT C0G
Taiwan Semiconductor Corporation

MBR30200PT C0G

partiture parte: 142

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.1V @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRF2020 C0G
Taiwan Semiconductor Corporation

SRF2020 C0G

partiture parte: 146

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 20V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF20L100CTHC0G
Taiwan Semiconductor Corporation

MBRF20L100CTHC0G

partiture parte: 129

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 850mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS3045CTHMNG
Taiwan Semiconductor Corporation

MBRS3045CTHMNG

partiture parte: 87

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR3035CTHC0G
Taiwan Semiconductor Corporation

MBR3035CTHC0G

partiture parte: 132

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 820mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRF1630 C0G
Taiwan Semiconductor Corporation

SRF1630 C0G

partiture parte: 80

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRS1630 MNG
Taiwan Semiconductor Corporation

SRS1630 MNG

partiture parte: 92

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 30V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF1090CTHC0G
Taiwan Semiconductor Corporation

MBRF1090CTHC0G

partiture parte: 94

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS25150CTHMNG
Taiwan Semiconductor Corporation

MBRS25150CTHMNG

partiture parte: 133

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 1.02V @ 25A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HERF1002G C0G
Taiwan Semiconductor Corporation

HERF1002G C0G

partiture parte: 111

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRS1640HMNG
Taiwan Semiconductor Corporation

SRS1640HMNG

partiture parte: 120

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR10H100CT C0G
Taiwan Semiconductor Corporation

MBR10H100CT C0G

partiture parte: 90

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF30200CTHC0G
Taiwan Semiconductor Corporation

MBRF30200CTHC0G

partiture parte: 118

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 1.05V @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRS20150 MNG
Taiwan Semiconductor Corporation

SRS20150 MNG

partiture parte: 94

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS2550CT MNG
Taiwan Semiconductor Corporation

MBRS2550CT MNG

partiture parte: 133

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 25A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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UGF1004G C0G
Taiwan Semiconductor Corporation

UGF1004G C0G

partiture parte: 126

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRF16150 C0G
Taiwan Semiconductor Corporation

SRF16150 C0G

partiture parte: 76

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF1535CTHC0G
Taiwan Semiconductor Corporation

MBRF1535CTHC0G

partiture parte: 158

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF3060CTHC0G
Taiwan Semiconductor Corporation

MBRF3060CTHC0G

partiture parte: 72

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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