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Diodi - Raddrizzatori - Matrici

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MBRS1590CT MNG
Taiwan Semiconductor Corporation

MBRS1590CT MNG

partiture parte: 100

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 7.5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRF1040HC0G
Taiwan Semiconductor Corporation

SRF1040HC0G

partiture parte: 117

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR3045PT C0G
Taiwan Semiconductor Corporation

MBR3045PT C0G

partiture parte: 145

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 820mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GP1002HC0G
Taiwan Semiconductor Corporation

GP1002HC0G

partiture parte: 131

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1.1V @ 5A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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MBRS2550CTHMNG
Taiwan Semiconductor Corporation

MBRS2550CTHMNG

partiture parte: 78

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 25A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HER1604G C0G
Taiwan Semiconductor Corporation

HER1604G C0G

partiture parte: 146

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 300V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRS1650 MNG
Taiwan Semiconductor Corporation

SRS1650 MNG

partiture parte: 112

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HERF1003G C0G
Taiwan Semiconductor Corporation

HERF1003G C0G

partiture parte: 77

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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HERF1001G C0G
Taiwan Semiconductor Corporation

HERF1001G C0G

partiture parte: 76

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 1V @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2090PTHC0G
Taiwan Semiconductor Corporation

MBR2090PTHC0G

partiture parte: 80

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS2035CT MNG
Taiwan Semiconductor Corporation

MBRS2035CT MNG

partiture parte: 172

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR30L120CT C0G
Taiwan Semiconductor Corporation

MBR30L120CT C0G

partiture parte: 161

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 120V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2050CT C0G
Taiwan Semiconductor Corporation

MBR2050CT C0G

partiture parte: 168

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRS20150HMNG
Taiwan Semiconductor Corporation

SRS20150HMNG

partiture parte: 85

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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GP1604 C0G
Taiwan Semiconductor Corporation

GP1604 C0G

partiture parte: 158

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 400V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 1.1V @ 8A, Velocità: Standard Recovery >500ns, > 200mA (Io),

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SRF1060HC0G
Taiwan Semiconductor Corporation

SRF1060HC0G

partiture parte: 108

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS3045CT MNG
Taiwan Semiconductor Corporation

MBRS3045CT MNG

partiture parte: 90

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 900mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR20100PT C0G
Taiwan Semiconductor Corporation

SR20100PT C0G

partiture parte: 90

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR1640PT C0G
Taiwan Semiconductor Corporation

SR1640PT C0G

partiture parte: 79

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 40V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS1560CTHMNG
Taiwan Semiconductor Corporation

MBRS1560CTHMNG

partiture parte: 77

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 60V, Current - Mediu Rettificatu (Io) (per Diode): 15A, Tensione - Avanti (Vf) (Max) @ Se: 750mV @ 7.5A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS20100CT MNG
Taiwan Semiconductor Corporation

MBRS20100CT MNG

partiture parte: 140

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS1045CTHMNG
Taiwan Semiconductor Corporation

MBRS1045CTHMNG

partiture parte: 83

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 10A, Tensione - Avanti (Vf) (Max) @ Se: 800mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF20H200CT C0G
Taiwan Semiconductor Corporation

MBRF20H200CT C0G

partiture parte: 125

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 200V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 970mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MURF1660CT C0G
Taiwan Semiconductor Corporation

MURF1660CT C0G

partiture parte: 156

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 600V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 1.5V @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR30L45CT C0G
Taiwan Semiconductor Corporation

MBR30L45CT C0G

partiture parte: 114

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 15A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS20150CT MNG
Taiwan Semiconductor Corporation

MBRS20150CT MNG

partiture parte: 153

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 150V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 1.23V @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRS20100HMNG
Taiwan Semiconductor Corporation

SRS20100HMNG

partiture parte: 146

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Standard, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS2535CTHMNG
Taiwan Semiconductor Corporation

MBRS2535CTHMNG

partiture parte: 136

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 820mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2045PT C0G
Taiwan Semiconductor Corporation

MBR2045PT C0G

partiture parte: 83

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 45V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 840mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2050PTHC0G
Taiwan Semiconductor Corporation

MBR2050PTHC0G

partiture parte: 139

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 950mV @ 20A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF3080CT C0G
Taiwan Semiconductor Corporation

MBRF3080CT C0G

partiture parte: 105

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 80V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 940mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF3035CT C0G
Taiwan Semiconductor Corporation

MBRF3035CT C0G

partiture parte: 127

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 35V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 820mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SRF2020HC0G
Taiwan Semiconductor Corporation

SRF2020HC0G

partiture parte: 119

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 20V, Current - Mediu Rettificatu (Io) (per Diode): 20A, Tensione - Avanti (Vf) (Max) @ Se: 550mV @ 10A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF25100CTHC0G
Taiwan Semiconductor Corporation

MBRF25100CTHC0G

partiture parte: 143

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 100V, Current - Mediu Rettificatu (Io) (per Diode): 25A, Tensione - Avanti (Vf) (Max) @ Se: 920mV @ 25A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF3090CT C0G
Taiwan Semiconductor Corporation

MBRF3090CT C0G

partiture parte: 88

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 90V, Current - Mediu Rettificatu (Io) (per Diode): 30A, Tensione - Avanti (Vf) (Max) @ Se: 940mV @ 30A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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SR1650 C0G
Taiwan Semiconductor Corporation

SR1650 C0G

partiture parte: 136

Configurazione Diode: 1 Pair Common Cathode, Tipu di Diode: Schottky, Tensione - Reverse DC (Vr) (Max): 50V, Current - Mediu Rettificatu (Io) (per Diode): 16A, Tensione - Avanti (Vf) (Max) @ Se: 700mV @ 8A, Velocità: Fast Recovery =< 500ns, > 200mA (Io),

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