Diodi - RF | Prudutti Discreti à Semiconduttore | 1

1SV308,L3F

partiture parte: 151

Tipu di Diode: PIN - Single, Tensione - Peak Reverse (Max): 30V, Attuale - Max: 50mA, Capacità @ Vr, F: 0.5pF @ 1V, 1MHz, Resistenza @ Sì, F: 1.5 Ohm @ 10mA, 100MHz,

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Toshiba Semiconductor and Storage

1SV308(TH3,F)

partiture parte: 6994

Tipu di Diode: PIN - Single, Tensione - Peak Reverse (Max): 30V, Attuale - Max: 50mA, Capacità @ Vr, F: 0.5pF @ 1V, 1MHz, Resistenza @ Sì, F: 1.5 Ohm @ 10mA, 100MHz,

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Toshiba Semiconductor and Storage

1SV307(TPH3,F)

partiture parte: 101204

Tipu di Diode: Standard - Single, Tensione - Peak Reverse (Max): 30V, Attuale - Max: 50mA, Capacità @ Vr, F: 0.5pF @ 1V, 1MHz, Resistenza @ Sì, F: 1.5 Ohm @ 10mA, 100MHz,

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Toshiba Semiconductor and Storage

1SS315TPH3F

partiture parte: 154649

Tipu di Diode: Schottky - Single, Tensione - Peak Reverse (Max): 5V, Attuale - Max: 30mA, Capacità @ Vr, F: 0.6pF @ 0.2V, 1MHz,

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Toshiba Semiconductor and Storage

1SS381,L3F

partiture parte: 139396

Tipu di Diode: PIN - Single, Tensione - Peak Reverse (Max): 30V, Attuale - Max: 100mA, Capacità @ Vr, F: 1.2pF @ 6V, 1MHz, Resistenza @ Sì, F: 900 mOhm @ 2mA, 100MHz,

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Toshiba Semiconductor and Storage

JDP2S02ACT(TPL3)

partiture parte: 80

Tipu di Diode: PIN - Single, Tensione - Peak Reverse (Max): 30V, Attuale - Max: 50mA, Capacità @ Vr, F: 0.4pF @ 1V, 1MHz, Resistenza @ Sì, F: 1.5 Ohm @ 10mA, 100MHz,

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Toshiba Semiconductor and Storage

JDP2S12CR(TE85L,Q

partiture parte: 6892

Tipu di Diode: PIN - Single, Tensione - Peak Reverse (Max): 180V, Attuale - Max: 1A, Capacità @ Vr, F: 1.3pF @ 40V, 1MHz, Resistenza @ Sì, F: 700 mOhm @ 10mA, 100MHz,

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Toshiba Semiconductor and Storage

JDH2S02FSTPL3

partiture parte: 199251

Tipu di Diode: Schottky - Single, Tensione - Peak Reverse (Max): 10V, Attuale - Max: 10mA, Capacità @ Vr, F: 0.3pF @ 0.2V, 1MHz,

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Toshiba Semiconductor and Storage

JDP4P02AT(TE85L)

partiture parte: 6881

Tipu di Diode: PIN - 2 Independent, Tensione - Peak Reverse (Max): 30V, Attuale - Max: 50mA, Capacità @ Vr, F: 0.4pF @ 1V, 1MHz, Resistenza @ Sì, F: 1.5 Ohm @ 10mA, 100MHz,

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Toshiba Semiconductor and Storage

JDH2S01FSTPL3

partiture parte: 134503

Tipu di Diode: Schottky - Single, Tensione - Peak Reverse (Max): 4V, Attuale - Max: 25mA, Capacità @ Vr, F: 0.6pF @ 0.2V, 1MHz,

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Toshiba Semiconductor and Storage

JDV2S10FS(TPL3)

partiture parte: 128

Tipu di Diode: Standard - Single, Tensione - Peak Reverse (Max): 10V, Capacità @ Vr, F: 3.4pF @ 2.5V, 1MHz,

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Toshiba Semiconductor and Storage

JDV2S09FSTPL3

partiture parte: 108

Tipu di Diode: Standard - Single, Tensione - Peak Reverse (Max): 10V, Capacità @ Vr, F: 11.1pF @ 1V, 1MHz,

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Toshiba Semiconductor and Storage

JDV2S41FS(TPL3)

partiture parte: 21538

Tipu di Diode: Standard - Single, Tensione - Peak Reverse (Max): 15V, Capacità @ Vr, F: 16pF @ 2V, 1MHz,

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Toshiba Semiconductor and Storage

JDV2S07FSTPL3

partiture parte: 21519

Tipu di Diode: Standard - Single, Tensione - Peak Reverse (Max): 10V, Capacità @ Vr, F: 4.9pF @ 1V, 1MHz,

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Toshiba Semiconductor and Storage

JDP2S02AFS(TPL3)

partiture parte: 198449

Tipu di Diode: PIN - Single, Tensione - Peak Reverse (Max): 30V, Attuale - Max: 50mA, Capacità @ Vr, F: 0.4pF @ 1V, 1MHz, Resistenza @ Sì, F: 1.5 Ohm @ 10mA, 100MHz,

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Toshiba Semiconductor and Storage

JDP2S08SC(TPL3)

partiture parte: 159289

Tipu di Diode: PIN - Single, Tensione - Peak Reverse (Max): 30V, Attuale - Max: 50mA, Capacità @ Vr, F: 0.4pF @ 1V, 1MHz, Resistenza @ Sì, F: 1.5 Ohm @ 10mA, 100MHz,

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Toshiba Semiconductor and Storage

JDH3D01STE85LF

partiture parte: 6728

Tipu di Diode: Schottky, Tensione - Peak Reverse (Max): 4V, Attuale - Max: 25mA, Capacità @ Vr, F: 0.6pF @ 0.2V, 1MHz,

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