Transistori - FET, MOSFET - Unicu

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Transistori - FET, MOSFET - Unicu

Toshiba Semiconductor and Storage

TK15S04N1L,LQ

partiture parte: 110924

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 17.8 mOhm @ 7.5A, 10V,

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TK5P50D(T6RSS-Q)

Toshiba Semiconductor and Storage

TK5P50D(T6RSS-Q)

partiture parte: 127525

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V,

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Toshiba Semiconductor and Storage

TPH2010FNH,L1Q

partiture parte: 117809

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 250V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.6A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 198 mOhm @ 2.8A, 10V,

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Toshiba Semiconductor and Storage

TPH1110ENH,L1Q

partiture parte: 110777

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.2A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 114 mOhm @ 3.6A, 10V,

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Toshiba Semiconductor and Storage

SSM3K35CTC,L3F

partiture parte: 122010

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 250mA (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V,

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TK20S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK20S06K3L(T6L1,NQ

partiture parte: 135950

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V,

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Toshiba Semiconductor and Storage

TPC8133,LQ(S

partiture parte: 142820

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V,

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Toshiba Semiconductor and Storage

TPH7R006PL,L1Q

partiture parte: 145095

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 4.5V,

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Toshiba Semiconductor and Storage

TK60P03M1,RQ(S

partiture parte: 152903

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 30A, 10V,

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TK80S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK80S06K3L(T6L1,NQ

partiture parte: 78944

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 80A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V,

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Toshiba Semiconductor and Storage

SSM3K339R,LF

partiture parte: 190791

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 2A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 1.8V, 8V, Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V,

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TJ40S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ40S04M3L(T6L1,NQ

partiture parte: 105767

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 40A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 10V,

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Toshiba Semiconductor and Storage

TPN1110ENH,L1Q

partiture parte: 113296

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 200V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7.2A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 114 mOhm @ 3.6A, 10V,

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Toshiba Semiconductor and Storage

TPH8R008NH,L1Q

partiture parte: 104295

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 80V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 34A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 17A, 10V,

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TK10S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK10S04K3L(T6L1,NQ

partiture parte: 144152

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V,

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TJ10S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ10S04M3L(T6L1,NQ

partiture parte: 135878

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 10V,

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SSM3K15AMFV,L3F

Toshiba Semiconductor and Storage

SSM3K15AMFV,L3F

partiture parte: 170532

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 100mA (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

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TK6P53D(T6RSS-Q)

Toshiba Semiconductor and Storage

TK6P53D(T6RSS-Q)

partiture parte: 115497

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 525V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 6A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V,

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Toshiba Semiconductor and Storage

TK560P65Y,RQ

partiture parte: 135881

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 7A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V,

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TJ20S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ20S04M3L(T6L1,NQ

partiture parte: 135946

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 22.2 mOhm @ 10A, 10V,

Wishlist

TK30S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK30S06K3L(T6L1,NQ

partiture parte: 128540

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 18 Ohm @ 15A, 10V,

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Toshiba Semiconductor and Storage

TK9P65W,RQ

partiture parte: 93752

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 9.3A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 560 mOhm @ 4.6A, 10V,

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Toshiba Semiconductor and Storage

TPH1R712MD,L1Q

partiture parte: 128383

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 20V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 60A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 4.5V,

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Toshiba Semiconductor and Storage

TPH4R606NH,L1Q

partiture parte: 83323

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 32A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6.5V, 10V, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V,

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TPCA8056-H,LQ(M

Toshiba Semiconductor and Storage

TPCA8056-H,LQ(M

partiture parte: 105511

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 30V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 48A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 24A, 10V,

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Toshiba Semiconductor and Storage

TPH1110FNH,L1Q

partiture parte: 95924

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 250V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 10A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 10V,

Wishlist

TK80S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK80S04K3L(T6L1,NQ

partiture parte: 78949

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 80A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 40A, 10V,

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Toshiba Semiconductor and Storage

TPH1R005PL,L1Q

partiture parte: 82892

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 45V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 150A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.04 mOhm @ 50A, 10V,

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Toshiba Semiconductor and Storage

TPN2010FNH,L1Q

partiture parte: 110042

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 250V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.6A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 198 mOhm @ 2.8A, 10V,

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TK8A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

TK8A50D(STA4,Q,M)

partiture parte: 98335

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 500V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V,

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TJ8S06M3L(T6L1,NQ)

Toshiba Semiconductor and Storage

TJ8S06M3L(T6L1,NQ)

partiture parte: 144102

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 8A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 104 mOhm @ 4A, 10V,

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Toshiba Semiconductor and Storage

TPH4R10ANL,L1Q

partiture parte: 7692

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 100V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 92A (Ta), 70A (Tc), Tensione di Trasmissione (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V,

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Toshiba Semiconductor and Storage

TK6P65W,RQ

partiture parte: 129654

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 650V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 5.8A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 2.9A, 10V,

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TJ15S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ15S06M3L(T6L1,NQ

partiture parte: 135951

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 15A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 50 mOhm @ 7.5A, 10V,

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TK20S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

TK20S04K3L(T6L1,NQ

partiture parte: 135921

Tipu FET: N-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 40V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 20A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V,

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TJ30S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

TJ30S06M3L(T6L1,NQ

partiture parte: 104508

Tipu FET: P-Channel, Tecnulugia: MOSFET (Metal Oxide), Scaricamentu à a Tensione di Sorgente (Vdss): 60V, Current - Scaricamentu Continuu (Id) @ 25 ° C: 30A (Ta), Tensione di Trasmissione (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 15A, 10V,

Wishlist

741

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